2003
DOI: 10.1051/epjap:2003013
|View full text |Cite
|
Sign up to set email alerts
|

μ-Raman investigations of plasma hydrogenated silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
39
0

Year Published

2004
2004
2020
2020

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 21 publications
(40 citation statements)
references
References 19 publications
1
39
0
Order By: Relevance
“…1 This approach also meets certain technological difficulties. One of them is related to low solubility limit of H in Si ≤10 6 at/cm 3 at 400 o C. 2 At doping levels higher than this limit, structural defects can be formed, Si can lost its crystallinity, [3][4][5] and can be converted to hydrogenated amorphous (a) Si (a-Si:H).…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…1 This approach also meets certain technological difficulties. One of them is related to low solubility limit of H in Si ≤10 6 at/cm 3 at 400 o C. 2 At doping levels higher than this limit, structural defects can be formed, Si can lost its crystallinity, [3][4][5] and can be converted to hydrogenated amorphous (a) Si (a-Si:H).…”
mentioning
confidence: 99%
“…As we demonstrate in this work, some hydrides have the potential to solve the above mentioned problems. 3 Hydrides have intensively been studied so far for their application as hydrogen storage/economy 7 and smart windows. 8,9 For these purposes acceleration of kinetics of hydrogenation/dehydrogenation processes, lowering the temperature at which the hydrogenation/dehydrogenation occurs, to increasing the hydrogen content, and lowering the weight of hydrides are extremely important.…”
mentioning
confidence: 99%
“…Cross-section transmission electron microscopy observation confirmed the comparison of the average size of the platelets created by different hydrogenation methods. 18,33 We attribute this phenomenon to a much higher efficiency when introducing hydrogen into c-Si with PECVD rather than with remote H-plasma treatment. Figure 2 shows the Raman spectra measured on the original surfaces ͑i.e., without beveling͒ of S1, S2, S3, and S4.…”
Section: Methodsmentioning
confidence: 99%
“…We have ascribed the two H 2 subpeaks at 4150 and 4160 cm −1 to the ortho-H 2 molecules ͑with parallel nuclear spins͒ and to the para-H 2 molecules ͑with antiparallel nuclear spins͒, respectively. 18,33 Interestingly, most investigations carried out on the remote plasma hydrogenated c-Si samples only show a broad single peak instead of a clear ortho-para splitting ͑see, for instance, Refs. 13 and 34͒.…”
Section: Shown Inmentioning
confidence: 99%
“…17 This same reasoning also explains why absorption modes from ͑100͒ platelets are observed in our samples with a SiGe strain layer but not in low temperature hydrogenated bulk Si. 23 As supersaturated H is consumed in the nucleation and growth of platelets, the local concentration of free H diminishes and creates a local H sink. The further trapping of H allows the platelet to grow as well as accumulate H 2 .…”
mentioning
confidence: 99%