2012 38th IEEE Photovoltaic Specialists Conference 2012
DOI: 10.1109/pvsc.2012.6318240
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Identification of defective regions in thin-film Si solar cells for new-generation energy devices

Abstract: We developed a high-conversion-efficiency, a-Si/IlC Si tandem solar module using Ilc-Si thin film on a Gen. 5 class glass substrate. The stabilized module efficiency was 10.7% (initial module efficiency: 12.0%). We prepared high performance a-Si/Jlc-Si tandem solar cells based on our original technology for J.1c-Si thin films with localized plasma confinement chemical vapor deposition, optical confinement techniques, and laser patterning. To obtain higher conversion efficiency, optical confinement techniques a… Show more

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Cited by 5 publications
(12 citation statements)
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“…To achieve large-area and high-rate deposition of μc-Si film by generating stable and uniform SiH 4 plasma in the high-pressure range of over 1000 Pa, we have been developing a unique process that we term "localized plasma confinement (LPC) CVD" [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. Fig.…”
Section: Lpc-cvd Methods For Very High-rate Deposition Of μC-simentioning
confidence: 99%
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“…To achieve large-area and high-rate deposition of μc-Si film by generating stable and uniform SiH 4 plasma in the high-pressure range of over 1000 Pa, we have been developing a unique process that we term "localized plasma confinement (LPC) CVD" [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. Fig.…”
Section: Lpc-cvd Methods For Very High-rate Deposition Of μC-simentioning
confidence: 99%
“…5 shows the I-V characteristics of an a-Si/mc-Si tandem solar module (G5 size). An initial module efficiency of 12.0% and a stabilized module efficiency of 10.7% were achieved [16][17][18][19][20][21][22][23][24]. We are also studying very high-efficiency small-area cells.…”
Section: Performance Of Tandem Cells and Modulesmentioning
confidence: 99%
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“…A defective region is affected by the underlying shape or the underlying film quality. It has been reported that the defective region consists of vacancies and a low-density amorphous region [2]. Previously, we proposed another factor for the formation of a defective region due to the shadowing effect on incident radicals [2], which should reduce the X c [8].…”
Section: Introductionmentioning
confidence: 93%
“…This is because a defective component in the µc-Si:H film is affected by transparent conductive oxide (TCO) texture, as the film thickness of the microcrystalline silicon increases [2]. To avoid a defective region being formed and achieve high conversion efficiency (Eff ), the surface morphology of TCO was modified to have a blunt angle or rounded shape [3].…”
Section: Introductionmentioning
confidence: 99%