We have matched the world's highest open-circuit voltage (V oc : 1.06 V) achieved to date for a layered structure comprised of a glass/tin oxide (SnO 2 )/hydrogenated amorphous silicon oxide (a-SiO:H) (p-i-n)/back electrode. For the purposes of this study, we adjusted the band gaps of each layer (p-i-n) to improve overall film quality. Fine-tuning of band profiles with reference to activation energy and optical band gap allowed us to offset the conduction band and the valence band of each layer (p-i-n) and thus improve the built-in potential rather than the electron conductivity, Fourier transform infrared spectroscopy, transmittance or reflectance ratio, resulting in a high V oc . To fully exploit the characteristics of wide-bandgap materials and prevent problems with absorbance, we employed commercially available SnO 2 in the front transparent conductive oxide instead of zinc oxide. Using our deposition and evaluation technologies to build a wide-band-gap single solar cell, we succeeded in matching the world's highest V oc of 1.06 V (Eff : 5.38%, J sc : 8.15 mA/cm 2 , FF: 0.624).