Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy

Abstract

An electron paramagnetic-resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm−3 exhibit two isotropic lines of equal intensity separated by 27 G. The double-line spectrum is expected for a nuclear-spin 1/2 species such as phosphorus. The symmetry of the center and the temperature dependence of the spin concentration suggest that phosphorus forms a substitutional shallow donor in diamond.

Electron Spin Resonance of Phosphorus in n-Type Diamond

“…1b from this transport regime is assigned to the contact regions rather than to the conductivity of the P-doped film itself. The isotropic g-factor g = 2.0028 and linewidth DH pp $ 7 G of this resonance agree well with that of carbon dangling bonds in polycrystalline diamond [10], and in crystalline thin CVD diamond films after implantation [11,12]. The same EDMR signal has been observed previously in polycrystalline CVD diamond films with high defect density [13].…”

“…The second, almost isotropic center from Refs. [11] and [12] has been observed recently together with the characteristic infrared absorption at 0.52 and 0.56 eV also present in the n-type samples of this study, suggesting that shallow states give rise to this ESR signal [12]. Because the implanted samples have a large number of additional defects besides the phosphorus-related states, n-type conductivity has not been confirmed for them yet.…”

“…Corrections in the opposite direction are discussed in Ref. [11] due to the relative electro negativities, which might reduce the wave function amplitude at the phosphorus atom in diamond compared to the situation in silicon. Delocalization determining the 31 P hyperfine splitting in silicon clearly does not account for the extremely low spin density smaller than 2% observed in the case of the first center reported here and in those reported previously in conventional ESR.…”

ESR Study of Phosphorus Implanted Type IIa Diamond

“…The occurrence of a slightly anistropic 25 G pair in CVD powder containing phosphorus [10] where there is no implantation induced defect, and of an isotropic 28 G pair in CVD films with very shallow P implantation energy (8 keV) during their growth [11], supports such a picture. Both works ascribe this signal to hyperfine interaction of the fifth donor electron of phosphorus with the nuclear spin.…”

Theoretical characterization of carrier compensation in P-doped diamond

“…However, the absence of available n-type diamond has been one of the biggest obstacles for the application of diamond although lots of work has been done [1][2][3][4][5][6][7][8][9][10]. It has been considered that the substitutional P (P s ) is the most available donor in diamond [11][12][13].…”