Identification of radiation induced dark current sources in Pinned PhotoDiode CMOS Image Sensors

Goiffon, Vincent; Virmontois,; Magnan,; Cervantes,; Gaillardin,; Girard, Éric; Paillet,; Martin-Gonthier,

doi:10.1109/radecs.2011.6131311

2011 12th European Conference on Radiation and Its Effects on Components and Systems 2011

DOI: 10.1109/radecs.2011.6131311

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Identification of radiation induced dark current sources in Pinned PhotoDiode CMOS Image Sensors

Vincent Goiffon¹,

Virmontois Virmontois²,

Magnan Magnan³

et al.

Abstract: This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral STI does not seem to play a role in the … Show more

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Cited by 4 publications

References 18 publications

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Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Marcelot

Goiffon

Rizzolo

et al. 2017

IEEE Trans. Electron Devices

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TCAD simulations are conducted on a 4T PPD pixel, on a conventional gated photodiode, and finally on a radiation hardened pixel. Simulations consist in demonstrating that it is possible to reduce the dark current due to interface states brought by the adjacent gate, by means of a sharing mechanism between the photodiode and the drain. The sharing mechanism is activated and controlled by polarizing the adjacent gate at a positive off voltage, and consequently the dark current is reduced and not compensated. The drawback of the dark current reduction is a reduction of the full well capacity of the photodiode, which is not a problem when the pixel saturation is limited by the readout chain. Some measurement performed on pixel arrays confirm the TCAD results.

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Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Marcelot

Goiffon

Rizzolo

et al. 2017

IEEE Trans. Electron Devices

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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Goiffon

Estribeau

Marcelot

et al. 2012

IEEE Trans. Nucl. Sci.

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International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO$_2$ ). In addition to the usually reported dark current increase and quantum efficiency drop at short wavelengths, several original radiation effects are shown: an increase of the pinning voltage, a decrease of the buried photodiode full well capacity, a large change in charge transfer efficiency, the creation of a large number of Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) centers active in the photodiode (even when the Transfer Gate (TG) is accumulated) and the complete depletion of the Pre-Metal Dielectric (PMD) interface at the highest TID leading to a large dark current and the loss of control of the TG on the dark current. The proposed mechanisms at the origin of these degradations are discussed. It is also demonstrated that biasing (i.e., operating) the PPD CIS during irradiation does not enhance the degradations compared to sensors grounded during irradiation

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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

Virmontois

Goiffon²,

Corbière³

et al. 2012

IEEE Trans. Nucl. Sci.

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International audienceThis paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2×106 TeV/g. Particle fluence up to 5×1014 n.cm-2 is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude

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Identification of radiation induced dark current sources in Pinned PhotoDiode CMOS Image Sensors

Cited by 4 publications

References 18 publications

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

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