Identification of radiative transitions in highly porous silicon

Calcott, P. D. J.; Nash, K. J.; Canham, Leigh; Kane, Michael J.; Brumhead, D.

doi:10.1088/0953-8984/5/7/003

Cited by 435 publications

(331 citation statements)

References 20 publications

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“…Assuming the porous silicon contains an array of quantum dots, the possi bility of a selective excitation of a given sub set of the dots which contributes to the opti cal line shape and thereby induces fluores cence line narrowing is unsurprising when the excitation is obtained by a laser excitation [1]. However, it is original when the selecti vity is provided by the electro-injection of carriers at energies determined by the ap plied voltage [2].…”

Section: Voltage-tuned Electroluminescencementioning

confidence: 99%

Luminescence in Porous Silicon. Voltage Control of the Colour

1994

Europhys. News

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Section: Voltage-tuned Electroluminescencementioning

confidence: 99%

Luminescence in Porous Silicon. Voltage Control of the Colour

1994

Europhys. News

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“…В силу слабо-сти электрон-фононного взаимодействия излучательный переход с участием фонона требует дополнительного времени, и в объемном кремнии доминируют безызлуча-тельные процессы. Экспериментальное открытие излуче-ния нанокристаллического [1] и пористого [2][3][4] кремния в видимом диапазоне в начале 90-х годов натолкнуло на мысль о возможном " выпрямлении" зонной структуры за счет наноструктурирования. В нанокристаллах (NC) размером в несколько нанометров электроны и дырки размерно квантованы и уже не обладают определeн-ным (квази)импульсом вследствие соотношения неопре-делeнности Гейзенберга.…”

Section: Introductionunclassified

Моделирование Методом Сильной Связи Кремниевых И Германиевых Нанокристаллов О Б З О Р

Герт¹,

Нестоклон²,

Прокофьев³

et al. 2017

Физика И Техника Полупроводников

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Обзор посвящен моделированию нанокристаллов Si и Ge методом сильной связи. Сначала приведeн краткий обзор методов моделирования и результатов, полученных для кремниевых и германиевых нанокристаллов. Затем подробно описан метод моделирования сильной связью в варианте с учeтом орбиталей s,p,d,s* и представлены результаты, полученные на его основе для нанокристаллов кремния и германия. DOI: 10.21883/FTP.2017.10.45009.8605

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“…Two of the prominent examples are porous silicon (e.g. [1,2]) and silicon nanoclusters in silica (e.g. [3]).…”

Section: Introductionmentioning

confidence: 99%

“…Many authors show that the visible emission can be due to quantum confinement of the excitation to a structure with less than 5-nm radius (Bohr radius of an exciton in silicon) (e.g. [2]). Confinement leads to a widening of the band gap and increased oscillator strength for the transition (e.g.…”

Section: Introductionmentioning

confidence: 99%

Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation

Hamza

Newman

Thielen

et al. 2003

Applied Physics A: Materials Science & Processing

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The intense, ultra-fast electronic excitation of clean silicon (100)-(2 × 1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (∼ 2-eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g. Xe 44+ and Au 53+ ) to produce the ultra-fast electronic excitation. The observation of excitonic features in the luminescence from these nanostructures has recently been reported. In this paper we report the dispersion of the excitonic features with laser excitation energy. A phonon-scattering process is proposed to explain the observed dispersion. Bulk silicon is a poor light emitter owing to its indirect band gap. Since 1990 many authors have observed visible-light emission from silicon nanostructures. Two of the prominent examples are porous silicon (e.g. [1,2]) and silicon nanoclusters in silica (e.g. [3]). Visible emission has also been observed from one-dimensionally confined silicon in silicon/SiO 2 superlattices [4]. Many authors show that the visible emission can be due to quantum confinement of the excitation to a structure with less than 5-nm radius (Bohr radius of an exciton in silicon) (e.g. [2]). Confinement leads to a widening of the band gap and increased oscillator strength for the transition (e.g. [5]). The extent of changes (direct versus indirect) in the band structure of nanostructures of silicon is still a controversial topic (e.g. [6,7]).Recently, we have briefly reported the observation of light emission from nanostructures on silicon formed by intense, ultra-fast electronic excitation [8]. The intense, ultra-fast electronic excitation of clean silicon (100)-(2 × 1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce at ∼560-nm wavelength (∼ 2-eV band gap). The silicon surfaces were irradiated with slow, and Au 53+ ) to produce the electronic excitation. The observation of excitonic features in the luminescence is particularly unusual for silicon nanostructures. The temperature dependence of the luminescence and the measurement of the triplet-singlet splitting of the emission strongly support the excitonic assignment. Intense, ultra-fast electronic excitation of a semiconductor surface such as silicon leads to the promotion of many (> 10 3 ) valence (bonding) electrons into the conduction bands (antibonding states). The promotion of a single electron or even many electrons into antibonding states does not impart a sufficient force for a sufficient length of time to cause displacement of the atomic nuclei. In contrast, the high density of electrons in antibonding states created by an intense, ultra-fast electronic excitation can impart an impulse leading to atomic displacements [9][10][11][12]. Direct evidence of atomic motion on a ∼160-fs time scale due to antibonding state excitation is reported by Petek et al. [13].The deposition of potential energy from slow, highly charged ions (SHCI) such as Xe 44+ (616-keV kinetic energy in this study) in se...

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Identification of radiative transitions in highly porous silicon

Cited by 435 publications

References 20 publications

Luminescence in Porous Silicon. Voltage Control of the Colour

Luminescence in Porous Silicon. Voltage Control of the Colour

Моделирование Методом Сильной Связи Кремниевых И Германиевых Нанокристаллов О Б З О Р

Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation

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