Identification of the 4d¹⁰5p⁶¹S₀Level in Xe III Using Optical Spectroscopy

Abstract

Two different proposals for the identification of the 4d105p6 1S0 level in Xe III are examined using the methods of optical spectroscopy. The proposal by Hertz [Z. Phys. A274, 289 (1975)] is confirmed. The 5p6 1S0 level is located 210 857.55 cm-1 above the Xe III ground state.

A Study of thens0np61SStates in the Rare Gas Ions

“…In the following we describe how collision spectroscopy can be used to show that the initial state in an optical transition corresponds to a double vacancy in the s shell. Then optical emission spectroscopy is used to obtain accurate energy values and we show also that the lines are enhanced in a hollowcathode discharge relative to a theta pinch, for example, in agreement with the results for Xe I11 [4].…”

“…This means that considerably more configuration interaction can be expected for the heavier rare gases than for neon and the identifications of the ns0np6 ' S terms in the former spectra have in fact been the subject of dispute in the literature. Recently a reidentification [3] of the 5s05p6 'S term in Xe I11 has been confirmed [4] by means of optical spectroscopy and in the present paper similar confirmation is provided of the most recent identifications by McGuire of the 3s03p6 'S and 4s04p6 ' S terms in Ar I11 and Kr 111, respectively [5, 61. In the present paper, however, photon spectroscopy of ionizing collisions (in the following called collision spectroscopy) is used to provide an independent confirmation of the configuration label of these states in the rare gases.…”

“…One further piece of evidence, mentioned in [4], forms the origin of the present work. In the optical study the lines from 5s05p6 were strong in a hollowcathode discharge but absent in other light sources (theta pinch, electrodeless discharge) even though other Xe I11 lines were strong in all three light sources.…”

“…In the previous work on the 5s05p6 'So state in Xe 111 [4] the identification was based on three pieces of evidence:…”

Microwave sputtering of conductors and insulators for optical emission and mass spectrometry

“…This cavity is very flexible; it has been employed for the excitation of Xe II and Xe III in sealed low pressure discharge tubes [9], for atmospheric pressure discharges (microwave induced plasmas) in argon and helium with wet aerosols [10] and to excite a supplementary discharge in boosted glow discharge sources [11]. The cavity has two parallel side plates about 8 cm square and 2 cm apart, which form the outer conductor ( Fig.…”