“…Widely used chemical oxidation of SiC micropowders requires rather harsh fabrication conditions (HNO 3 :HF (1:3, v/v) at 100 °C), 33−37 while an electrochemical etching of SiC wafers can be carried out in a more controllable way. 23,24,38,39 Recently, the electrochemical procedure was successfully applied to obtain small (<10 nm) SiC NPs from the slurry of relatively large SiC nanopowder (>50 nm). 40 According to different groups of authors, [34][35][36]38,39 the surface of as-prepared "top-down" SiC NPs can be terminated with a wide variety of functionalities, such as hydroxyls, Si−O− Si, Si−O−C and C−O−C bridges, CH x groups, "sp 2 -carbon", silane (Si−H) groups, Si−Si bonds, and some fluorinecontaining species.…”