IGBT Junction Temperature Estimation Using a Dynamic TSEP Independent of Wire Bonding Faults

Abstract

Despite that many temperature-sensitive electrical parameters (TSEPs) have been discovered for the online estimation of the junction temperature of IGBT devices, their wide adoption in the field is yet to come. This is because they are most susceptible to both the aging status and operating points of IGBTs, which can result in inaccurate results if not attended. In this study, a novel dynamic TSEP, the gate voltage undershoot V GE(np) of the complementary IGBT switch, is proposed. It is based on the crosstalk effect and measured during the turn-OFF switching transition of the controlled IGBT switch for its temperature estimation. Its monotonic temperature dependence has been identified with implications for the changing load current and bus voltage, which are experimentally verified using a 1200 V/450 A IGBT module. The theoretical analysis and experimental results also show that V GE(np) is independent of bond wire failures while providing comparatively high relative sensitivity. The MMC power equivalent experimental results are given to verify the feasibility of the proposed method in commercial engineering applications. Finally, the multivariate linear regression method is used to improve the ability to estimate the IGBT's temperature by accounting for the operating point.Index Terms-Crosstalk effect, insulated gate bipolar transistor (IGBT), junction temperature monitoring, temperature-sensitive electrical parameter (TSPE). I. INTRODUCTIONO FFSHORE wind power has become one of the popular renewable energy resources with comparably more stable wind speed and larger capacity for power generation. The flexible dc transmission technology based on modular multilevel converters (MMCs) has become the most attractive technical solution for long-distance offshore wind power transmission and Manuscript

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