IHP SiGe:C BiCMOS Technologies as a Suitable Backup Solution for the ATLAS Upgrade Front-End Electronics

Abstract

In this study we present the results of radiation hardness studies performed on three different SiGe:C BiCMOS technologies from Innovation for High Performance Microelectronics (IHP) for their application in the Super-Large Hadron Collider (S-LHC). We performed gamma, neutron and proton irradiations on the bipolar section of these technologies, in order to consider ionization and atomic displacement damage on electronic devices. Results show that transistors from the IHP BiCMOS technologies remain functional after the radiation levels expected in the inner detector (ID) of the ATLAS Upgrade experiment. These technologies are one of the candidates to constitute the analog part of the Front-End chip in the ATLAS-upgrade experiment, in the S-LHC.

Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup

“…Or the study of the saturation region had not got practical sense. But using modern integrated circuits for the front end electronics of High Energy Physics experiments (such as the ATLAS Detector in the Large Hadron Collider at CERN) leads to change the situation [5,6]. The present estimations of the total dose in the ATLAS Upgrade Inner Detector's Middle Region give value near 50 Mrad (SiO2) for the front end electronics operation during 10 years [7].…”

“…Where K p is generation rate per unit dose rate; K y is electron yield; P is the dose rate. Result of substituting (6) in equation ( 5) is…”

Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for high energy physics applications

“…Results for this survey have been presented in the past for the different technologies studied. Different state-of-the art SiGe BiCMOS technologies have been evaluated, such as several IBM technologies [2][3][4] and several IHP technologies [5][6][7]. After an extensive market study and numerous radiation hardness experiments, the two most suitable candidate SiGe BiCMOS technologies for its application in the ATLAS Upgrade experiment proved to be the 130 nm 8WL from IBM and the 250 nm SGB25V from IHP Microelectronics.…”