II–VI/III–V structures with a heterovalent interface in the active region: New opportunities in band engineering

Ivanov, S. V.; Kaygorodov, V. A.; Sorokin, Sergey; Соловьев, В. А.; Ситникова, A. А.; Lyublinskaya, O. G.; Terent'ev, Ya. V.; Vasilyev, Yu. B.; Berkovits, V. L.; Торопов, А. А.; Kop’ev, P. S.

doi:10.1002/pssc.200304087

Cited by 6 publications

(8 citation statements)

References 26 publications

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“…In the computations, the parameters are inserted as directly extracted from the original papers, [21,22] and then a cross-check is made that the estimated f values agree with those deduced using the simulation program JEMS. [23] Substitution, taking the InSb layer as reference of known composition, gives the dependence R 002 = I 002 /I 002 InSb = (1 + Ax + By) 2 where A = (f Cd − f In )/(f In − f Sb ) and B = (f Sb − f Te )/ (f In − f Sb ). The plot of R 002 as a function of x (Cd%) and y (Te%) is presented in Figure 3, and predicts brighter contrast for the CdTe layer, in agreement with experimental observations (cf.…”

Section: Interfacial Intermixing At Heterovalent Nca Interfaces: Propmentioning

confidence: 99%

“…The selective combination of closely lattice‐matched group IIVI/group IIIV compound semiconductors offers many potential benefits due to the wide range of bandgap energies achievable, as well as novel electronic effects at the interface arising from the valence mismatch. The presence of novel transport properties with high interfacial sheet charge, a range of band offsets associated with local interfacial dipoles, and possible transitions to new topological insulators are anticipated. The appearance and effectiveness of such effects are crucially dependent on the character of the noncommon‐atom (NCA) interface, i.e., whether a sharp polar interface is formed or, on the contrary, if there are mixtures of chemical bonds across the interface (IIV or IIIVI bonds) leading to a nonpolar interface, which is otherwise the predicted energetically stable configuration .…”

Section: Introductionmentioning

confidence: 99%

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Strategies for Analyzing Noncommon‐Atom Heterovalent Interfaces: The Case of CdTe‐on‐InSb

Luna

Trampert

et al. 2019

Adv Materials Inter

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Semiconductor heterostructures are intrinsic to a wide range of modern‐day electronic devices, such as computers, light‐emitting devices, and photodetectors. Knowledge of chemical interfacial profiles in these structures is critical to the task of optimizing the device performance. This work presents an analysis of the composition profile and strain across the noncommon‐atom heterovalent CdTe/InSb interface, carried out using a combination of electron microscopy imaging techniques. Because of the close atomic numbers of the constituent elements, techniques such as high‐angle annular‐dark‐field and large‐angle bright‐field scanning transmission electron microscopy, as well as electron energy‐loss spectroscopy, give results from the interface region that are inherently difficult to interpret. By contrast, use of the 002 dark‐field imaging technique emphasizes the interface location by comparing differences in structure factors between the two materials. Comparisons of experimental and simulated CdTe‐on‐InSb profiles reveal that the interface is structurally abrupt to within about 1.5 nm (10–90% criterion), while geometric phase analysis based on aberration‐corrected electron microscopy images reveals a minimal level of interfacial strain. The present investigation opens new routes to the systematic investigation of heterovalent interfaces, formed by the combination of other valence‐mismatched material systems.

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Section: Interfacial Intermixing At Heterovalent Nca Interfaces: Propmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Strategies for Analyzing Noncommon‐Atom Heterovalent Interfaces: The Case of CdTe‐on‐InSb

Luna

Trampert

et al. 2019

Adv Materials Inter

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“…These structures combine a narrow-gap III-V QW with wide-gap II-VI barriers. 51 Manganese is introduced into the ZnTe barrier where it substitutes Zn and keeps electrically neutral providing a localized spin S = 5/2. The enhanced magnetic properties are caused by the penetration of electron wave function of two-dimensional electrons into the (Zn,Mn)Te layer and can be controllably varied by the position and concentration of Mn 2+ ions.…”

Section: Heterovalent N-alsb/inas/znmnte Quantum Wellsmentioning

confidence: 99%

“…While III-V and II-VI DMS systems are widely studied and their magnetic properties are well known, heterovalent n-type AlSb/InAs/ZnMnTe quantum wells are new in the DMS family. These structures combine a narrow gap III -V QW with wide gap II -VI barriers [49]. Manganese is introduced into the ZnTe barrier where it substitutes Zn and keeps electrically neutral providing a localized spin S = 5/2.…”

Section: Heterovalent N-alsb/inas/znmnte Quantum Wellsmentioning

confidence: 99%

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

et al. 2012

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We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum-wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well-known II-VI and III-V DMS material systems, as well as in heterovalent AlSb/InAs/(Zn,Mn)Te QWs, which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures, the efficiency of the current generation is drastically enhanced compared to nonmagnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn 2+ ions polarized by an external magnetic field.

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“…The QWs were grown applying III-V/II-VI "hybrid" technique following the recipes given in Ref. 7. The Mn layers have been inserted into the II-VI barrier.…”

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confidence: 99%

Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

Terent'ev

Zoth

Belkov

et al. 2011

Applied Physics Letters

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The concept of spin-based electronics demands heterostructures possessing high electron mobility, pronounced ferromagnetic properties, and strong spin-orbit interaction (SOI).1,2 In particular, manganese doped diluted magnetic semiconductors (DMS) showing high Curie temperature and large Landé factor are in the focus of current research. While enhanced magnetic properties have been obtained in (Cd,Mn)Te-and (Ga,Mn)As-based quantum wells (QWs), the SOI in these materials is rather small. Thus, realization of DMS heterostructures based on materials which possess a strong SOI, e.g., InAs, becomes important. Most recently, it has been demonstrated that the incorporation of Mn into a heterostructure device containing an InAlAs/InGaAs QW leads to a two-dimensional hole gas.3 In these structures, the Mn ions are in close proximity to the InGaAs channel hosting the hole gas. While DMS hole systems with strong SOI have been realized and demonstrate very interesting magnetotransport properties, 4 the fabrication of InAs-based DMS with high mobility two-dimensional electron gas (2DEG) channels is still a challenge. The 2DEG is characterized by a simple parabolic band structure and much higher mobility compared to that of the holes, even in Mn-doped DMS structures like (Cd,Mn)Te QW (Ref. 5) features making 2DEG systems attractive for various applications. The only In(Mn)As-based superlattice with electron mobility l from 10 2 to 10 3 cm 2 /Vs has been realized in Ref. 6. Here, we report on the fabrication of Mn modulation doped structures with an InAs 2DEG channel. The QWs were grown applying III-V/II-VI "hybrid" technique following the recipes given in Ref. 7. The Mn layers have been inserted into the II-VI barrier. To explore the magnetic properties of the 2DEG, we investigated spin polarized electric currents induced by microwave (mw) radiation. 8,9 Our measurements show that hybrid AlSb/InAs/(Zn,Mn)Te QWs are characterized by enhanced magnetic properties which can be changed by tuning of the spatial position of Mn-doping layer as well as by the variation of temperature.The structures were grown on (001)-oriented GaAs semiinsulating substrates at temperature of 280 C. For the fabrication of AlSb/InAs/(Zn,Mn)Te heterovalent structures with Mn-containing barriers, we used two separated MBE setups. The first, Riber 32P, was employed to obtain the III-V part consisting of the 0.2 lm-thick GaAs and 2 lm-thick GaSb buffer layers capped with a 4 nm-thick AlSb barrier and a 15 nm-thick InAs QW (two last layers have common InSb-like interface). A (2.5 nm-GaSb/2.5 nm-AlSb) 10 superlattice was placed within the first third of the GaSb buffer to suppress propagation of misfit-induced threading dislocations. The II-VI parts of the structures were deposited pseudomorphically on the III-V part in the second two-chambers MBE setup (Semiteq) after the ex-situ sulfur chemical passivation in a 1M Na 2 S 9H 2 O solution of the top InAs layer. The coherent growth of ZnTe on InAs was initiated by simultaneous opening of Zn and Te fluxes onto ...

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II–VI/III–V structures with a heterovalent interface in the active region: New opportunities in band engineering

Cited by 6 publications

References 26 publications

Strategies for Analyzing Noncommon‐Atom Heterovalent Interfaces: The Case of CdTe‐on‐InSb

Strategies for Analyzing Noncommon‐Atom Heterovalent Interfaces: The Case of CdTe‐on‐InSb

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

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