III&amp;#x2013;V-N compounds for multi-junction solar cells on Si

Yamane, Keisuke; Urakami, Noriyuki; Sekiguchi, Hiroto; Wakahara, Akihiro

doi:10.1109/pvsc.2014.6925509

Cited by 6 publications

(4 citation statements)

References 23 publications

(9 reference statements)

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“…From the room temperature photoluminescence spectrum, the peak energy and FWHM are estimated to be 1.62 eV and 160 meV, respectively. The peak energy is highly consistent with the theoretical value, 22) while the FWHM may include the effect of compositional fluctuations confirmed by the XRD measurement.…”

supporting

confidence: 87%

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

Yamane

Goto

Takahashi

et al. 2017

Appl. Phys. Express

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A p–i–n GaAs0.75P0.19N0.06 structure lattice-matched to Si was realized on a 2-in. Si (001) substrate for monolithic tandem solar cells. The sample structure had mirror-like surfaces without any indication of pinholes or microcracks. X-ray diffraction results showed that all the layers were coherently grown on the Si substrate. Transmission electron microscopy results evidently showed that a dislocation-free device structure was grown on the Si substrate. Finally, current–voltage characteristics showed rectifying properties with low reverse saturation current, which was indicative of the high crystallinity of the device layer.

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supporting

confidence: 87%

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

Yamane

Goto

Takahashi

et al. 2017

Appl. Phys. Express

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“…To extract the charge carriers from the undoped layer, a structure consisting of vertically aligned InP QDs embedded in a GaAsPN matrix is placed along the absorption layer with p+ and n+ GaAsPN doped layers. By designing GaAsPN as a lattice-matching or tensile strain conditions, 23) this structure can be grown on a Si substrate without the generation of misfit dislocations. Figure 1(b) represents the band structure of the stacked InP/GaAsPN type-II QDs in the pin solar cell where columnar InP dots forms miniband in the valence band by the overlap of the hole wavefunctions.…”

Section: Methodsmentioning

confidence: 99%

Growth of phosphide-based type-II stacked quantum dots for III–V/Si photovoltaic applications

Piedra-Lorenzana¹,

Yamane²,

Hori³

et al. 2021

Jpn. J. Appl. Phys.

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The necessity for improved renewable energy sources has increased in recent years, particularly solar cells have been continuously improving. This study proposes a type-II quantum dot (QD) structure using InP and GaP-based III–V–N alloys to enhance electron/hole spatial separation for photovoltaic applications. With appropriate size and thickness, InP QD/GaAsPN enables type-II band alignment. Additionally, it has a tunable bandgap of approximately 1.7 eV with strain compensation conditions on a Si substrate, which enables dislocation-free III–V/Si tandem cells. Self-assembled nanostructures of InP were fabricated on GaP, and two types of islands were observed. Growth parameters were investigated to ensure better control over the morphology of islands. Subsequently, the optimized parameters were employed for fabricating a 30-period good quality InP/GaP stacked QD structure without any strain compensation layers. These results may help in designing more efficient GaP-based III–V–N solar cells on Si substrates.

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“…More recently, approaches involving metamorphic graded buffers such as GaAsP and SiGe have gained a lot of attention for III-V/Si tandem solar cells (Grassman, Carlin, and Ringel 2010;Dimroth et al 2014;Diaz et al 2014;Yaung, Lang, and Lee 2014). Additional heteroepitaxial integration approaches, which in comparison to the previously mentioned techniques have been less extensively explored, include -(i) lattice-matched dilute nitride (GaAsPN) solar cells on Si substrate (Geisz et al 2005;Almosni et al 2013;Yamane et al 2014) and (ii) lattice-mismatched InGaN based solar cells (Ager et al 2008;Brown et al 2010;Tran et al 2012) on Si substrate. The most critical challenges associated with heteroepitaxial integration of III-V materials on Si substrate are highlighted as follows:…”

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain¹,

Hudait²

2018

Energyo

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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III–V-N compounds for multi-junction solar cells on Si

Cited by 6 publications

References 23 publications

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

Growth of phosphide-based type-II stacked quantum dots for III–V/Si photovoltaic applications

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

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