III-Nitride nanowire optoelectronics

Interface phonon modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D multi-quantum well structures

“…The use of AlN buffer layer significantly reduces the dislocation density and improves the overall structural quality of the SL layers as well as the quantum efficiency of the MQW optoelectronic device. 8,29,30,36,37 In order to confirm it, a bi-layer thin film of Al 0.50 Ga 0.50 N(~300 nm)/AlN(~200 nm) (schematic Fig. 2(a)) was also studied for its symmetry allowed Raman phonon modes of AlN-E 2 H and AlN-A 1 (LO) along with the presence of IF modes (Fig.…”

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

“…Narrow bandgap III–V materials are of particular interests for infrared photodetection due to their ultrahigh mobility and direct bandgaps that fit for high speed detections . Using MBE and CVD methods, InAs and InSb nanowires have been routinelly fabricated in laboratories.…”

Quantum well engineering in InGaN/GaN core-shell nanorod structures

“…The advantages of fabricating InGaN/GaN QW-based LEDs in a core-shell structure compared to planar growth have been well discussed [1][2][3]. Attention is often drawn to advantages such as the increased surface area of emission, reduced influence of the Auger effect due to the reduced carrier density afforded by the greater QW coverage, and access to low defect m-plane surfaces-a benefit of the nanorods' reduced footprint on the substrate [4].…”