2017
DOI: 10.1002/admt.201700005
|View full text |Cite
|
Sign up to set email alerts
|

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

Abstract: Infrared photodetectors are finding widespread applications in telecommunication, motion detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The nanostructured materials and architectures are attracting extensive interests in photodetectors in view of the potential benefits from confined light‐matter interaction, fast carrier dynamics and ultrahigh photoconductive gains. This review concentrates on the photodetection in the infrared spectrum and recent progresses in constructing advanced… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
63
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
8
1

Relationship

2
7

Authors

Journals

citations
Cited by 103 publications
(63 citation statements)
references
References 266 publications
(403 reference statements)
0
63
0
Order By: Relevance
“…Infrared (IR) photodetection has been widely used in modern multifunctional technologies such as thermal imaging, biomedical imaging, night vision, information communication, military, etc . This involves the detection wavelengths ranging from 750 nm to 1 mm, being divided into three regions: near‐IR (NIR, 750 nm to 3 µm), mid‐IR (MIR, 3–15 µm), and far‐IR (FIR, 15 µm to 1 mm) . Nowadays, the detection of different technologically crucial wavelength regions is implemented by separate photosensitive semiconductors with appropriate bandgaps.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Infrared (IR) photodetection has been widely used in modern multifunctional technologies such as thermal imaging, biomedical imaging, night vision, information communication, military, etc . This involves the detection wavelengths ranging from 750 nm to 1 mm, being divided into three regions: near‐IR (NIR, 750 nm to 3 µm), mid‐IR (MIR, 3–15 µm), and far‐IR (FIR, 15 µm to 1 mm) . Nowadays, the detection of different technologically crucial wavelength regions is implemented by separate photosensitive semiconductors with appropriate bandgaps.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] This involves the detection wavelengths ranging from 750 nm to 1 mm, being divided into three regions: near-IR (NIR, 750 nm to 3 µm), mid-IR (MIR, 3-15 µm), and far-IR (FIR, 15 µm to 1 mm). [4] Nowadays, the detection of different technologically crucial wavelength regions is implemented by separate photosensitive semiconductors with appropriate bandgaps. For example, Si, [5,6] Ge, [7,8] and InGaAs [9] are the most promising and commercialized semiconductors for sensing in the NIR regimes while the detection of MIR regimes generally relies on narrow bandgap semiconductor compounds such as PbS, PbSe, [10,11] and HgCdTe.…”
Section: Introductionmentioning
confidence: 99%
“…In photodiodes, the photodetection gain is limited due to the maximum attainable quantum efficiency (photon-to-electron conversion efficiency) less than unity [46]. Hence, photodiodes are less sensitive and are usually operated under reverse bias or self-driven mode without external bias.…”
Section: Heterostructured Phototransistorsmentioning
confidence: 99%
“…In addition to the ligand engineering, the synthetic routes for obtaining photostable and compatible QDs for optically active materials and structures mostly resulted in novel QDs with bright emission in the visible region while the near‐infrared and infrared region remain mostly unexplored to date. It can be important in the future to develop QD composite materials and structures with the infrared absorption and emission characteristics especially for the lasing and waveguiding applications critical for the telecommunication field and for subsurface biosensing and bioimaging in biomedical and bioengineering fields . It is also important to note that the issues of excessive toxicity, important for bio‐related and wearable optoelectronic applications, are essentially ignored in current research efforts but should be addressed in the future efforts to expand the prospective application in the near term.…”
Section: Qd Composite Structure For Lasingmentioning
confidence: 99%