III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications

Zhao, Chao; Alfaraj, Nasir; Subedi, Ram Chandra; Liang, Jian; Alatawi, Abdullah A.; Alhamoud, Abdullah A.; ElKabbash, Mohamed; Alias, Mohd Sharizal; Ng, Tien Khee; Ooi, Boon S.

doi:10.1016/j.pquantelec.2018.07.001

Cited by 93 publications

(80 citation statements)

References 189 publications

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“…A wide range of techniques have been explored to synthesize AlGaN ternary nanowires (including AlN nanowires). The detailed growth studies can be found in a number of review papers [15,30,32,34]. In what follows, we briefly discuss the major synthesis techniques for AlGaN ternary nanowires.…”

Section: A Brief Overview Of Synthesis Techniquesmentioning

confidence: 99%

“…Compared with bulk materials, low-dimensional materials such as nanowires can have different electrical and optical properties, such as the strong confinement of charge carriers and photons associated with the reduced dimensions. Motivated by exploring novel electrical and optical properties at low dimensions as well as new material platforms for future generation electronic and photonic devices, tremendous efforts have been devoted in the past two decades to the study of semiconductor nanowires and their device applications; and remarkable progresses have been made in applying various semiconductor nanowires to light-emitting devices, solar energy conversion devices, transistors, and biosensors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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Section: A Brief Overview Of Synthesis Techniquesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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“…Another option is to use nanostructures to achieve efficient long wavelength emission, exploiting the partial strain compensation that can occur. One possibility is to use nanowires which have exhibited higher In content InGaN QWs . By changing the nanowire size, one can control the amount of indium in the InGaN layer and potentially create monolithic RGB pixels .…”

Section: Challenges and Solutionsmentioning

confidence: 99%

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Wierer

Tansu

2019

Laser & Photonics Reviews

119

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Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance, efficiency, and large color gamut, are of great interest for applications such as watches, phones, and virtual displays. The high pixel density requirements of some emissive displays require a particular class of LEDs that are sub‐20‐micrometers in length, called micro‐LEDs. While state‐of‐the‐art emissive displays incorporate organic LEDs, an alternative is inorganic III‐nitride LEDs with potential reliability and efficiency benefits. Here we explore the performance, challenges, and prospective outcomes for III‐nitride micro‐LEDs to produce efficient emissive displays and provide insight to advance this technology. Calculations are performed to determine the operating points for the micro‐LEDs and the efficiency of the overall emissive display. It is shown that III‐nitride micro‐LEDs suffer from some of the same problems as their larger‐sized solid‐state lighting LED cousins; however, the operating conditions of micro‐LEDs can result in different challenges and research efforts. These challenges include improving efficiency at low current densities; improving the efficiency of longer wavelength (green and red) LEDs; and creating device designs that can overcome low coupling efficiency, high surface recombination, and display assembly difficulties.

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“…In recent years, the heterogeneous integration of a variety of inorganic materials for fabricating electronic and optoelectronic devices on silicon has shown clear promise in reshaping the future of the electronics industry [1]. Such an integration approach is widely expected to pave the way for the implementation of Schottky photodiode device architectures, thereby allowing for the implementation of vertical device structures and lower response times.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)2O3 Schottky photodetectors grown on silicon by pulsed laser deposition

Alfaraj¹,

Li²,

Kang³

et al. 2019

Conference on Lasers and Electro-Optics

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III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications

Cited by 93 publications

References 189 publications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)2O3 Schottky photodetectors grown on silicon by pulsed laser deposition

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