III-nitrides based resonant tunneling diodes

Abstract

Resonant tunneling diodes are nano-devices which have characteristics of negative differential resistance. They are widely used in digital and analog circuits to reduce components and decrease power consumption. In recent years, resonant tunneling diodes have been found to be an important choice for implementing terahertz device. GaN-based resonant tunneling diodes have inherited the advantages of III-nitride, such as high operating frequency, high power, high temperature resistance, etc, which has become a research hotspot. This paper introduces the basic situation of resonant tunneling diodes, reviews the progress of simulation and experiment, analyzes the influence of polarization field, and presents the challenges. The analysis provided in this paper may help the audience to become more familiar with current research efforts, as well as to provide inspiration for future III-nitride quantum device designs.

Optical Mapping of Nonequilibrium Charge Carriers

“…Extrapolations of the simulations to P = 0 show that T L + ΔT e exc should be close to 40 K for the PL1 response and to 70 K for the PL2 emission, demonstrating that the low-energy laser is more efficient for heating electrons in the GaSb layers than the high-energy laser, due to its greater penetration into the heterostructure. The simulations confirm that, in addition to the linear dependence of the carrier temperature with the applied electrical power, as indicated by eq (7), nonthermalization between electrons and holes leads to a nonlinear dependence in the case of T eff e−h . Following these results, a gradient map of the carrier temperature throughout the heterostructure can be sketched as shown by Figure 2a,b for EL and EL + PL conditions, respectively.…”

“…Significant progress has been achieved in the electronic structure engineering of nanoscopic systems, allowing for a thorough characterization of the charge carrier dynamics and correlation with the optical response. This is particularly crucial in semiconductor heterostructures like resonant tunneling diodes (RTDs) − where challenging questions still pervade the physics of carrier excitation, transport, relaxation, and recombination. − In particular, mapping the thermalization gradient along the transport path and how it is affected by external factors is still a relevant topic to be characterized and understood, and optical tools are well suited for this purpose. , …”

“…This is particularly crucial in semiconductor heterostruc-tures like resonant tunneling diodes (RTDs) [1][2][3][4][5] where challenging questions still pervade the physics of carrier excitation, transport, relaxation, and recombination. [6][7][8][9][10] In particular, mapping the thermalization gradient along the transport path and how it is affected by external factors is still a relevant topic to be characterized and understood, and optical tools are well suited for that purpose.…”

Simulation and Comparative Study of Resonant Tunneling Diode

“…With the introduction of the light absorption layer, RTD is also useful in optical communications [8]. RTD's application is curbed by its highly sensitive structure and fabrication process which results in poor consistency on the substrate [9].…”

Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes

“…Resonant tunneling diodes (RTDs), with their high cut-off frequency and excellent output power performance, present a promising candidate for THz sources [4]. Particularly, the THz oscillator, based on gallium nitride (GaN), is considered one of the most efficient electronic devices to date, owing to the excellent properties of GaN [5,6]. In fact, such properties include wide bandgap energy, high carrier mobility, high electron peak velocity, high thermal stability, and saturation electron velocity.…”