III-V-on-Si photonic integrated circuits realized using micro-transfer-printing

Zhang, Jing; Muliuk, Grigorij; Juvert, Joan; Kumari, Sulakshna; Goyvaerts, Jeroen; Haq, Bahawal; Beeck, Camiel Op de; Kuyken, Bart; Morthier, Geert; Thourhout, Dries Van; Baets, Roel; Lepage, Guy; Verheyen, Peter; Campenhout, Joris Van; Gocalinska, Agnieszka; O’Callaghan, James; Pelucchi, E.; Thomas, Kevin; Corbett, Brian; Trindade, António Jośe; Roelkens, Günther

doi:10.1063/1.5120004

Cited by 137 publications

(83 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Despite the great efforts that have been devoted on heterogeneous integration of PC lasers on Si [25][26][27] , the monolithic integration is the most promising approach for a higher yield, higher density and scalability for III-V PC lasers integrated on Si platforms, which will further increase density and yield of fabricated laser compared with III-V ridge-waveguide lasers and bonded III-V PC lasers on Si [28][29][30] . Moreover, the monolithic integration is an ideal solution to reduce the substrate cost by growing III-V materials on large-scale Si wafers, instead of using dedicated and expensive GaAs and InP wafers [31][32][33][34] . However, the major challenge of monolithic integration is the significant degradation of the crystal quality of metamorphic III-V layers on Si due to the large material mismatch in lattice constant, thermal expansion coefficients, as well as polarity [35][36][37] .…”

mentioning

confidence: 99%

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Zhou¹,

Tang²,

Xiang³

et al. 2020

Nat Commun

View full text Add to dashboard Cite

Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantumdot PC lasers exhibit single-mode operation with an ultra-low threshold of~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.

show abstract

mentioning

confidence: 99%

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Zhou¹,

Tang²,

Xiang³

et al. 2020

Nat Commun

View full text Add to dashboard Cite

show abstract

“…Provided that the adhesion of the device to its native substrate can be reduced to a sufficiently low level, the device's adhesion to the stamp can be kinetically turned on or off. This process was introduced to integrated photonics for the heterogeneous integration of active III-V devices on silicon photonic circuits [21,25,26]. The process of microtransfer printing starts with the definition of active devices (referred to as coupons) on a III-V wafer (the "source" wafer).…”

Section: Fabrication a Microtransfer Printing: Source Sample Preparamentioning

confidence: 99%

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Beeck

Haq

Elsinger

et al. 2020

Optica

Self Cite

105

View full text Add to dashboard Cite

The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate.

show abstract

“…In most of the III-V waveguide-coupled opto-electronic devices integrated on the Si waveguide circuits adiabatic taper structures are used to couple light between the III-V waveguide and the Si waveguide. [16] The micron-scale accuracy of the transfer printing tool imposes a limit on the alignment tolerance of the adiabatic taper structure. [17] In this work, we demonstrate the first III-V-on-Si SOAs integrated through micro-transfer-printing.…”

Section: Micro-transfer-printing Technologymentioning

confidence: 99%

Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers

Haq

Kumari

Gasse

et al. 2020

Laser & Photonics Reviews

Self Cite

View full text Add to dashboard Cite

The micro-transfer-printing of prefabricated C-band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays of III-V SOAs are fabricated on the source InP wafer. These can then be micro-transfer-printed on the target SOI photonic circuits in a massively parallel fashion. Additionally, this approach allows for greater flexibility in terms of integrating different epitaxial layer structures on the same SOI waveguide circuit. The technique allows integrating SOAs on a complex silicon photonic circuit platform without changing the foundry process-flow. Two different SOA designs with different optical confinement factor in the quantum wells of the III-V waveguide are discussed. This allows tuning the small-signal gain and output saturation power of the SOA. The design with higher optical confinement in the quantum wells has a small-signal gain of up to 23 dB and an on-chip saturation power of 9.2 mW at 140 mA bias current and the lower optical confinement factor design has a small-signal gain of 17 dB and power saturation of 15 mW at 160 mA of bias current.

show abstract

III-V-on-Si photonic integrated circuits realized using micro-transfer-printing

Cited by 137 publications

References 34 publications

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers

Contact Info

Product

Resources

About