III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range

Abstract

Abstract:A compact (1.2 mm 2 ) fully integrated mid-IR spectrometer operating in the 3 μm wavelength range is presented. To our knowledge this is the longest wavelength integrated spectrometer operating in the important wavelength window for spectroscopy of organic compounds. The spectrometer is based on a silicon-on-insulator arrayed waveguide grating filter. An array of InAs 0.91 Sb 0.09 p-i-n photodiodes is heterogeneously integrated on the spectrometers output grating couplers using adhesive bonding. The spectrometer insertion loss is less than 3 dB and the waveguide-referred responsivity of the integrated photodiodes at room temperature is 0.3 A/W.

Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon

“…While a number of passive MIR photonic waveguides and devices have been constructed on a variety of silicon waveguide platforms [5][6][7][8], the development of integrated active components on silicon for longer wavelengths has been more limited. Thermo-optic phase shifters for the 5 µm range [9], heterogeneously integrated InP-based type-II photodiodes for wavelengths up to 2.4 µm [10], demultiplexers for the 2 µm range utilizing an array of similar photodiodes [11], a fully integrated spectrometer utilizing an array of InAs 0.91 Sb 0.09 -based photodiodes for 3-4 µm [12], and multiple-quantum-well InGaAs lasers which emit 2.01 µm light in continuous wave (CW) mode at room temperature [13] have been reported.…”

“…InAs0.91Sb0.09-based photodiodes for 3-4 µ m [12], and multiple-quantum-well InGaAs lasers which emit 2.01 µ m light in continuous wave (CW) mode at room temperature [13] have been reported.…”

Monolithic on-chip mid-IR methane gas sensor with waveguide-integrated detector

“…24,25 Our device borrows elements from our previous work on spiral chalcogenide glass waveguide sensors 22 and waveguide-integrated PbTe detectors. 25,26 PbTe provides a monolithic integration capability that represents a major advantage over previously demonstrated mid-IR waveguide-integrated photodetectors, [27][28][29][30] which mostly rely on hybrid bonding or transfer of the active detector material. The use of chalcogenide glass, a well-known Kerr medium, as the sensor material also foresees seamless integration of the sensing element and the detector with on-chip nonlinear sources to enable broadband spectroscopic interrogation.…”

III-V-on-silicon Photonic Integrated Circuits for Spectroscopic Sensing in the Mid-Infrared

“…A wavelength tuning over 58 nm and side mode suppression ratio better than 60 dB is demonstrated [4]. For the 3 µm wavelength we demonstrate the realization of high-performance arrayed waveguide gratings [5] and integrated spectrometers based on GaSb-based p-i-n photodetectors heterogeneously integrated on the silicon waveguide platform [6]. Beyond 4 µm wavelength we propose the use of germanium on silicon-on-insulator waveguide circuits.…”