III–V quantum-dot lasers monolithically grown on silicon

Liao, Mengya; Chen, Siming; Park, Jae-Seong; Seeds, A.J.; Liu, Huiyun

doi:10.1088/1361-6641/aae6a5

Cited by 41 publications

(33 citation statements)

References 130 publications

(212 reference statements)

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“…Although the heterogeneous approach has been intensively studied and sufficiently matured to be commercially adopted by industry, this approach still has limitations, including expensive, smallsized III-V substrates and low integration density [30]. In this regard, the monolithic integration, capable of providing economically efficient mass production and dense integration, has attracted substantial interest recently [31]. Moreover, the defect-tolerable III-V QD lasers have demonstrated the feasibility of direct growth of III-V on Si.…”

Section: Monolithic Integration Of Iii-v Qd Lasers On Simentioning

confidence: 99%

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits have emerged as a promising solution for high-performance Intra-/Inter-chip optical communication. However, a lack of a Si-based light source remains to be solved due to the inefficient light-emitting property of Si. To tackle the absence of a native light source, integrating III-V lasers, which provide superior optical and electrical properties, has been extensively investigated. Remarkably, the use of quantum dots as an active medium in III-V lasers has attracted considerable interest because of various advantages, such as tolerance to crystalline defects, temperature insensitivity, low threshold current density and reduced reflection sensitivity. This paper reviews the recent progress of III-V quantum dot lasers monolithically integrated on the Si platform in terms of the different cavity types and sizes and discusses the future scope and application.

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Section: Monolithic Integration Of Iii-v Qd Lasers On Simentioning

confidence: 99%

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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“…An interesting and intuitive approach is the heteroepitaxy allowing for the monolithic integration via the direct growth of III–V semiconductors on silicon substrates with MBE or MOVPE. This, however, brings several technological challenges: first of all, the high lattice mismatch of 4.2% between Si and GaAs leads to the formation of threading dislocations nucleating at the Si‐GaAs‐interface and propagating through the GaAs layer . The result is an inferior layer quality and surface defects strongly reducing the optical properties, for example, by affecting radiative recombination processes of integrated QDs.…”

Section: Hybrid Quantum Photonic Circuitsmentioning

confidence: 99%

Semiconductor Quantum Dots for Integrated Quantum Photonics

et al. 2019

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Quantum mechanics promises to have a strong impact on many aspects of research and technology, improving classical analogues via purely quantum effects. A large variety of tasks are currently under investigation, for example, the implementation of quantum computing, sensing, metrology, and communication. From a general perspective, in a similar way as classical computing benefited by the reduction of the device footprint, enabling the realization of highly complex chips, a range of quantum applications will sensibly improve thanks to the successful realization of on-chip quantum photonics. Conversely to bulky table-top experiments, it would be very advantageous to transfer all required functionalities on the same quantum photonic chip. The key elements for quantum photonic circuits are on-demand nonclassical light sources, a versatile photonic logic, the ability to store quantum information, and highly efficient detectors, directly integrated on-chip. Among several systems capable of the efficient generation of singleand indistinguishable photons, quantum dots are rapidly establishing as one of the most appealing candidates. This paper reviews the recent progress in the on-chip integration of quantum-dot-based nonclassical light sources as well as in the development of the main building blocks, either integrated monolithically or hybridly on a compact and scalable platform. IntroductionFrom the foundation of quantum mechanics in the early 20th century to explain fundamental physical observations, over the development of transistors and lasers in the 1950s and 1960s, the second quantum revolution is now in full swing. The driving force behind this continuing "quantum footrace" are quantum mechanical effects based on superposition and entanglement that can lead to profound changes. Especially in the field of quantum information science, dramatic improvements are expected in terms of increased computational speed and communication security if compared with classical counterparts.Talking about quantum supremacy, two problems-Grover's algorithm for the efficient search in large unsorted databases and Shor's algorithm for the prime factorization of large integers-are frequently mentioned. [1][2][3] Grover's quantum search algorithm can find an element of a search space M in O( √ M) operations compared to the best known classical algorithms approximately requiring O(M) steps. [4] Shor's algorithm can prime factorize large integers with N bits in polynomial speed compared to the exponential scaling of classical algorithms. Currently, several cryptography schemes in electronic communication systems rely on the difficulty of prime factorization as its security method. Consequently, a quantum computer could break the cryptographic keys quickly by calculating or searching exhaustively all key possibilities, which may allow an eavesdropper to intercept the communication channel. [5] However, quantum key distribution schemes can be alternatively used, which are based on the secure exchange of a cryptographic key between remote...

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“…After that, a three-step growth method was introduced: a GaAs buffer layer with a thickness of 30, 170 and 800 nm grown at 350 o C, 450 o C and 590 o C, respectively [18], [42]. With these techniques, most of the defects could be well confined in the first 200 nm, although the density of TDs propagating towards the active region was still as high as 1 x 10 9 cm −2 [47]. To further eliminate the TDs, the periodically strained-layer superlattices (SLSs) composed of In 0.18 Ga 0.82 As/GaAs were developed as the dislocation filter layers (DFLs) [48].…”

Section: Qd Lasers On Si Substrate With Offcutmentioning

confidence: 99%

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

et al. 2019

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In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III-V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III-V compounds. Although the material dissimilarity between III-V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III-V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

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III–V quantum-dot lasers monolithically grown on silicon

Cited by 41 publications

References 130 publications

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Semiconductor Quantum Dots for Integrated Quantum Photonics

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

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