For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large-area and high-density devices. A major challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. While crystalline domains are generally needed to achieve high charge carrier mobilities, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high-performance donor-acceptor polymers which exhibited low degrees of energetic disorder, while having high fraction of amorphous morphology, appears promising for polymer semiconductors. Here, a low crystalline, i.e. near-amorphous, indacenodithiophene-co-benzothiadiazole (IDTBT) polymer and a semi-crystalline thieno[3,2-b]thiophene-diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under applied strains. It is observed that the low crystalline IDTBT is able to achieve both high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer, and observed mobility ~0.6 cm 2 V-1 s-1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV-Vis and GIXD to elucidate the molecular origins of high ductility. In summary, the nearamorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high-performance polymer semiconductor.