Image lithography in telluride suboxide thin film through controlling “virtual” bandgap

Wei, Tao; Wei, Jingsong; Zhang, Kui; Zhang, Long

doi:10.1364/prj.5.000022

Cited by 15 publications

(3 citation statements)

References 24 publications

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“…The binding energy distinction of Te 3d XPS related to telluroxides could be caused by the formation of mixed phases with different lattice structures. [ 54 ] When discharged to ‐0.2 V, a residual peak of Te (+4) 3d 5/2 XPS is still observed in ZS+ZC/ACN, while it is nearly eliminated in ZS+ZC/ACN/Glu, manifesting that the Glu/Cl − co‐additive boosts the conversion of Te oxide. Based on the discussion above, the oxidative conversion mechanisms of Nano‐Te in ZS+ZC/ACN/Glu and ZS+ZC/ACN are outlined in Figure 4h.…”

Section: Resultsmentioning

confidence: 99%

Offense‐Defense‐Balanced Strategy Escorting Tellurium Oxidation Conversion towards Energetic and Long‐Life Zn Batteries

Qi,

Tang,

Feng

et al. 2023

Advanced Energy Materials

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Among six‐electron Te conversion for energetic aqueous Zn batteries, the main capacity contributor, Te0/Te4+ redox usually causes substantial battery capacity/life discount due to its sluggish kinetics/poor reversibility. Herein, for the first time, an offense‐defense‐balanced strategy to simultaneously address the deficiencies is reported. Beyond previous proton‐ or reductant‐regulated solutions, this strategy efficaciously reconciles the pending capacity‐lifespan conflict. As a proof of concept, additive‐level nucleophilic chlorine ions (Cl−) and reductive glucose (Glu) in electrolytes are synergistically employed as “offensiver” and “defender” for Te0/Te4+ conversion, respectively. The Cl−/Glu co‐additive well inherits the nucleophilic motivation effect of Cl− on Te0/Te4+ conversion, and eliminates the formation of Cl−‐induced diffluent metastable phase (γ‐TeO2), enabling a deep and highly reversible Te0/Te4+ redox. Compared with co‐additive‐free electrolytes, the activation energy for Te conversion is lowered (61.4 vs. 52.8 kJ mol−1), and the shuttle of active materials is effectively inhibited. Consequently, Zn‖Te batteries deliver a volumetric capacity of approximately theoretical value (2409 mAh cm−3) at 0.2 A g−1, and a 15∼30‐fold longer lifespan than those in conventional electrolytes (over 5000 cycles with a decay of only 0.15‰ per cycle at 4 A g−1). This work opens a new avenue to develop other chalcogen conversion‐based aqueous Zn batteries.

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Section: Resultsmentioning

confidence: 99%

Offense‐Defense‐Balanced Strategy Escorting Tellurium Oxidation Conversion towards Energetic and Long‐Life Zn Batteries

Qi,

Tang,

Feng

et al. 2023

Advanced Energy Materials

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“…According to theoretical results, the oxidation process starts at Te vacancies or from Ga 2 Te 3 formed after the decomposition of water-intercalated GaTe (Figures S2 and S3, Supporting Information). After 21 h in air, the surface is passivated with an outermost oxide skin with GaTeO, Ga 2 O 3 , [36] Ga 2 O 3 , Te, and Te oxides (TeO x , TeO 2 , TeO 3 ) [37] (see TEM image in Figure 7f for direct imaging). These oxides further evolved to oxy-hydroxide species, [38] as a consequence of favorable water dissociation at defects on the oxidized surface.…”

Section: Surface Structure and Electronic Band Structure Of Gatementioning

confidence: 99%

Improving the Efficiency of Gallium Telluride for Photocatalysis, Electrocatalysis, and Chemical Sensing through Defects Engineering and Interfacing with its Native Oxide

Bondino

Duman

Nappini

et al. 2022

Adv Funct Materials

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Gallium telluride (GaTe) is a van der Waals semiconductor, currently adopted for photonic and optoelectronic devices. However, the rapid degradation of GaTe in air, promoted by Te vacancies, is detrimental for device applications. Here, it is demonstrate that the surface oxidation of GaTe can be unexpectedly exploited for expanding the breadth of applications of GaTe. Specifically, the formation of a nanoscale sub-stoichiometric wide-band-gap Ga 2 O 3 skin, promoted by Te vacancies, over narrow-band-gap GaTe x upon air exposure is beneficial for electrocatalysis, photocatalysis, and gas sensing . In particular, the Heyrovsky step (H ads + H + + e − → H 2 ) of hydrogen evolution reaction in an acidic medium is barrier-free for the sub-stoichiometric gallium-oxide/ gallium-telluride heterostructure, which also enables a significant reduction of costs with respect to state-of-the-art Pt/C electrodes. In the photocatalytic process, the photo-generated electrons migrate from GaTe to Ga 2 O x skin, which acts as the chemically active side of the interface. Moreover, the Ga 2 O 3 / GaTe heterostructure is a suitable platform for sensing of H 2 O, NH 3 , and NO 2 at operational temperatures extended up to 600 °C (useful for gas detection in combustion processes), mainly due to the increased area of charge redistribution after adsorption achieved upon oxidation of GaTe.

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“…High-speed imaging is an important function for lithography, microscopy, optical storage information reading, etc. To improve the imaging efficiency, auto-focusing technique is necessary [1][2][3][4][5][6][7][8] . For autofocusing technology, defocusing detection is one of the most relevant factors [9][10][11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Defocusing detection of high-speed imaging for samples with arbitrary pattern structures

Gao

Wei

2022

Thirteenth International Conference on Information Optics and Photonics (CIOP 2022)

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High-speed imaging is very important in the semiconductor optical mask field and biology and life sciences. There have been countless auto-focusing methods based on reflected light for improving the imaging efficiency. However, these methods are not suitable for transparency or semi-transparency samples. There are some common characteristics for the samples, such as disorder and irregular for the structures on the sample surfaces transparency or semi-transparency. Focusing errors would occur due to the uneven reflectivity of the sample surface. This work presents a transmitted light spot method to solve the auto-focusing problem for the transparency or semi-transparency samples. The trace of transmitted light is simulated, and the expression of the focusing error signal is derived and given. The relationships between the defocus amount and focus error signal are calculated, and the results are experimentally demonstrated, accordingly. This method is expected to be applied to high-speed optical imaging.

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Image lithography in telluride suboxide thin film through controlling “virtual” bandgap

Cited by 15 publications

References 24 publications

Offense‐Defense‐Balanced Strategy Escorting Tellurium Oxidation Conversion towards Energetic and Long‐Life Zn Batteries

Offense‐Defense‐Balanced Strategy Escorting Tellurium Oxidation Conversion towards Energetic and Long‐Life Zn Batteries

Improving the Efficiency of Gallium Telluride for Photocatalysis, Electrocatalysis, and Chemical Sensing through Defects Engineering and Interfacing with its Native Oxide

Defocusing detection of high-speed imaging for samples with arbitrary pattern structures

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