Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias

Sweetman, Adam; Danza, R.; Gangopadhyay, S.; Moriarty, Philip

doi:10.1088/0953-8984/24/8/084009

Cited by 12 publications

(11 citation statements)

References 49 publications

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“…1 ). Although we refer to this contrast as “inverted” we also note that similar imaging can occur in the case of “enhanced-depression” images (where the height of the up atoms is reduced, and the dips associated with the down atoms are enhanced [ 25 ]). However, it appears that in this case the “up” atoms appear as dark depressions, as we have observed depressions corresponding to known defect-based protrusions on the surface with tips displaying similar inverted contrast over the clean surface ( Supporting Information File 1 ).…”

Section: Resultsmentioning

confidence: 97%

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

Sweetman¹,

Jarvis²,

Danza³

et al. 2012

Beilstein J. Nanotechnol.

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Summary Background: Noncontact atomic force microscopy (NC-AFM) now regularly produces atomic-resolution images on a wide range of surfaces, and has demonstrated the capability for atomic manipulation solely using chemical forces. Nonetheless, the role of the tip apex in both imaging and manipulation remains poorly understood and is an active area of research both experimentally and theoretically. Recent work employing specially functionalised tips has provided additional impetus to elucidating the role of the tip apex in the observed contrast. Results: We present an analysis of the influence of the tip apex during imaging of the Si(100) substrate in ultra-high vacuum (UHV) at 5 K using a qPlus sensor for noncontact atomic force microscopy (NC-AFM). Data demonstrating stable imaging with a range of tip apexes, each with a characteristic imaging signature, have been acquired. By imaging at close to zero applied bias we eliminate the influence of tunnel current on the force between tip and surface, and also the tunnel-current-induced excitation of silicon dimers, which is a key issue in scanning probe studies of Si(100). Conclusion: A wide range of novel imaging mechanisms are demonstrated on the Si(100) surface, which can only be explained by variations in the precise structural configuration at the apex of the tip. Such images provide a valuable resource for theoreticians working on the development of realistic tip structures for NC-AFM simulations. Force spectroscopy measurements show that the tip termination critically affects both the short-range force and dissipated energy.

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Section: Resultsmentioning

confidence: 97%

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

Sweetman¹,

Jarvis²,

Danza³

et al. 2012

Beilstein J. Nanotechnol.

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“…Constant height STM images can provide further insights, as shown in Fig. 1 , probing the onset of the conduction band and donor band of our crystal (sample bias: +0.3 V) [ 9 , 18 , 27 ]. Individual atoms within each dimer are clearly visible, with minimal conductance occurring directly through the bulk states (requiring a reduction in tip–sample separation).…”

Section: Resultsmentioning

confidence: 98%

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

Croshaw

Dienel

Huff

et al. 2020

Beilstein J. Nanotechnol.

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The combination of scanning tunnelling microscopy (STM) and non-contact atomic force microscopy (nc-AFM) allows enhanced extraction and correlation of properties not readily available via a single imaging mode. We demonstrate this through the characterization and classification of several commonly found defects of the hydrogen-terminated silicon (100)-2 × 1 surface (H–Si(100)-2 × 1) by using six unique imaging modes. The H–Si surface was chosen as it provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption or placement of surface hydrogen atoms. While samples with relatively large areas of the H–Si surface are routinely created using an in situ methodology, surface defects are inevitably formed reducing the area available for patterning. By probing the surface using the different interactivity afforded by either hydrogen- or silicon-terminated tips, we are able to extract new insights regarding the atomic and electronic structure of these defects. This allows for the confirmation of literature assignments of several commonly found defects, as well as proposed classifications of previously unreported and unassigned defects. By combining insights from multiple imaging modes, better understanding of their successes and shortcomings in identifying defect structures and origins is achieved. With this, we take the first steps toward enabling the creation of superior H–Si surfaces through an improved understanding of surface defects, ultimately leading to more consistent and reliable fabrication of atom scale devices.

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“…However, the most exciting applications of either of the techniques are related to their ability to perform nanomanipulation [3][4][5] . Both lateral [6][7][8] and vertical [9][10][11] manipulations have been used to build bottom-up nanostructures on surfaces. The latter manipulation, where the manipulated atom is either dropped to or extracted from the surface, normally results in a modification of the tip apex with the concomitant change of the image contrast.…”

mentioning

confidence: 99%

Vertical atomic manipulation with dynamic atomic-force microscopy without tip change via a multi-step mechanism

et al. 2014

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Manipulation is the most exciting feature of the non-contact atomic force microscopy technique as it allows building nanostructures on surfaces. Usually vertical manipulations are accompanied by an abrupt tip modification leading to a change of contrast. Here we report on low-temperature experiments demonstrating vertical manipulations of 'super'-Cu atoms on the p(2 Â 1) Cu(110):O surface, both extractions to and depositions from the tip, when the imaging contrast remains the same. These results are rationalized employing a novel and completely general method that combines density functional theory calculations for obtaining energy barriers as a function of tip height and a Kinetic Monte Carlo algorithm for studying the tip dynamics and extraction of manipulation statistics. The model reveals a novel multistep manipulation mechanism combining activated jumps of 'super'-Cu atoms to/from the tip with their drag by and diffusion on the tip.

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Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias

Cited by 12 publications

References 49 publications

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

Vertical atomic manipulation with dynamic atomic-force microscopy without tip change via a multi-step mechanism

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