2017
DOI: 10.1038/nmat4966
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Imaging and tuning polarity at SrTiO3 domain walls

Abstract: Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO/SrTiO interface 2DEG at the nanoscale. In particular, SrTiO domain boundaries have the unusual distinction of remaining highly m… Show more

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Cited by 80 publications
(81 citation statements)
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“…The surface termination can only switch at ferroelectric domain walls, which, at the surface, are associated with very large steps. The observed domain size is in the few µm range, and the orientation of the steps is consistent with observations made on various thin films grown on SrTiO 3 , where the domain walls run along the main crystallographic directions and linear combinations thereof [27][28][29].…”
supporting
confidence: 88%
“…The surface termination can only switch at ferroelectric domain walls, which, at the surface, are associated with very large steps. The observed domain size is in the few µm range, and the orientation of the steps is consistent with observations made on various thin films grown on SrTiO 3 , where the domain walls run along the main crystallographic directions and linear combinations thereof [27][28][29].…”
supporting
confidence: 88%
“…To explore this route, however, one first needs to understand whether (and how) the ferroelastic degrees of freedom can be harnessed via a suitable external field. As the ferroelastic domain walls have recently been shown to be polar [16][17][18][19][20][21][22], it is reasonable to expect that they will respond to an electrical bias. A detailed study on the evolution of the domain wall topology upon application of a voltage is currently missing, leaving the above question largely unanswered.…”
Section: Low-temperature Dielectric Anisotropy Driven By An Antiferromentioning
confidence: 99%
“…However, the spatial resolution is not sufficient to simultaneously image the current paths and the domain boundaries; the size of the latter does not exceed 500-600 nm. Estimations of the wall (twins, dislocations) widths in the bundles reported by several authors are between few tens of nanometers [44,45] and 1-10 nm [48,49]. If the conducting channel consists of a bundle of filaments of micrometer size, one could consider each filament as forming a junction neighbouring filaments being separated by 10 nm walls.…”
mentioning
confidence: 99%