2020
DOI: 10.1002/aenm.201903814
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Imaging Carrier Transport Properties in Halide Perovskites using Time‐Resolved Optical Microscopy

Abstract: Halide perovskites have remarkable properties for relatively crudely processed semiconductors, including large optical absorption coefficients and long charge carrier lifetimes. Thanks to such properties, these materials are now competing with established technologies for use in cost-effective and efficient light harvesting and light emitting devices. Nevertheless, our fundamental understanding of the behaviour of charge carriers in these materialsparticularly on the nano-to micro-scalehas on the whole lagged … Show more

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Cited by 26 publications
(20 citation statements)
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References 136 publications
(192 reference statements)
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“…Since 2009, halide perovskites have emerged as promising materials for efficient optoelectronic devices such as photovoltaics and light‐emitting diodes (LEDs), [ 1–3 ] with performance in some configurations already exceeding comparable existing commercial technologies. [ 4,5 ] Halide perovskite semiconductors show unique properties such as remarkable defect tolerance, [ 6 ] efficient light absorption [ 7,8 ] and long charge‐carrier diffusion lengths, [ 9–11 ] which put them at the forefront of emerging thin‐film technologies. One advantage they have over conventional semiconductors is that they can be fabricated through facile and cost‐effective preparation techniques (e.g., solution processing), with the precursor components self‐assembling into relatively large entities (domains of ≈0.1 to several micrometers in size, [ 12 ] referred to as grains).…”
Section: Introductionmentioning
confidence: 99%
“…Since 2009, halide perovskites have emerged as promising materials for efficient optoelectronic devices such as photovoltaics and light‐emitting diodes (LEDs), [ 1–3 ] with performance in some configurations already exceeding comparable existing commercial technologies. [ 4,5 ] Halide perovskite semiconductors show unique properties such as remarkable defect tolerance, [ 6 ] efficient light absorption [ 7,8 ] and long charge‐carrier diffusion lengths, [ 9–11 ] which put them at the forefront of emerging thin‐film technologies. One advantage they have over conventional semiconductors is that they can be fabricated through facile and cost‐effective preparation techniques (e.g., solution processing), with the precursor components self‐assembling into relatively large entities (domains of ≈0.1 to several micrometers in size, [ 12 ] referred to as grains).…”
Section: Introductionmentioning
confidence: 99%
“…(See SI Section XII and Figures S11 and S12 for Gaussian profiles and fits at selected times.) We find a linear relationship between the quantity [σ 2 ( t ) – σ 2 (0)] and t ( Figure 2 c), indicating that the spatial broadening is due to classical exciton diffusion 23 , 29 and can be related to the exciton diffusion coefficient D using the formula 23 , 29 , 30 Linear fits to the data in Figure 2 c with eq 1 yield a diffusion coefficient of 0.018 cm –2 s –1 for n x = 1.0 × 10 8 cm –2 ( Figure 2 c inset). At this low exciton density, we expect exciton trapping to dominate on the basis of the earlier PL efficiencies, η.…”
mentioning
confidence: 86%
“…Several researchers have put effort into understanding these fundamentals through spatial and time resolved techniques such as microwave impedance microscopy, c‐AFM, optical microscopy using a home built microscope, and femtosecond time‐resolved transient absorption spectroscopy. [ 316–319 ] Although various methods and techniques are available to investigate local properties in perovskites, still it requires precise experimental studies to simultaneously probe lifetime, transport time, and diffusion length for different microstructures. For the first time, Bahrami et al.…”
Section: Challenges and Remedial Steps To Boost Pscs Performancementioning
confidence: 99%