Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopy

Abstract

Articles you may be interested inThreshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasersThe application of near-field scanning optical microscopy (NSOM) to the characterization of TnGaAsP multiquantum-well lasers is reported. Collection mode images are collected at varying drive currents from well below to well above the threshold current. The high resolution of NSOM (--x/20) provides a detailed mapping of the laser output from the active region as well as additional output from the surrounding mesa. Spectral analysis of the image shows that the extra emission is due to InP electroluminescence. In addition to the emission characteristics of the laser it is also possible to detect local heating of the laser facet via thermal expansion. Topographical images are achieved simultaneously with NSOM images by digitizing the feedback signal which maintains a constant tip-surface gap. It is shown that these data have direct implications on device performance and problems associated with carrier leakage and nonradiative defects. 0 1994 American Institute of Physics.

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“…1 Introduction Near-field scanning optical microscope (NSOM) is adequate to evaluate the optical property of quantum structures (QS) on nanometer scale [1]: photoluminescence (PL) from semiconductor QS with near-field excitation was extended to an evaluation of the diffusion length of electrons and holes [2][3][4][5]; exciton migration within a QS was traced based on a temporal change of PL excited by a femtosecond laser [6]; near-field excited photocurrent was also reported [7]. However these previous studies focused only on the high spatial resolution of the NSOM observation, neglecting possible differences between the far-field observation and the near-field one.…”