Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors

Reboh, S.; Boureau, Victor; Yamashita, T.; Faynot, O.; Coquand, R.; Loubet, N.; Bernier, Nicolas; Augendre, E.; Chao, Robin; Li, J.; Zhang, J.; Muthinti, Raja

doi:10.1109/iedm19573.2019.8993524

Cited by 21 publications

(26 citation statements)

References 2 publications

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“…The finite element method (FEM) simulation depicted for the sample with the SiGe 35 sheets is in good agreement with the PED maps and illustrates the abovediscussed behaviors clearly. 5,6 For this study, no PED lattice deformation maps along the fins were obtained (along the y direction). Previous studies on wafers manufactured in a similar fashion reported that, for practically infinitely long fins, no relaxation occurs and the Si ð1−xÞ Ge x sheets remain fully strained.…”

Section: (E) Shows the Correlation Plotmentioning

confidence: 99%

“…6 Additionally, due to the Poisson effect tensile strain also appears in the Si sheets along the fins (y direction), although at lower amounts. 5 The y direction becomes the channel and hence transport direction, and therefore the induced strain is beneficial for nFET devices since electron mobility is increased in tensile Si.…”

Section: (E) Shows the Correlation Plotmentioning

confidence: 99%

“…This general observation is in agreement with previously published results and corresponding simulations. 5,6,8 Furthermore, the compressive strain difference increases significantly with decreasing CD, and the measurement with perpendicular polarization is more sensitive to CD changes. In general, the trends for the wafers with different Ge concentrations are comparable but differ in amplitude.…”

Section: Raman Strain Monitoringmentioning

confidence: 99%

“…Beam diameters of ∼5 nm allow mapping of channel strain even in aggressively scaled FETs with channel lengths of <20 nm. [4][5][6][7] However, TEM techniques are time-consuming, destructive, and require sample preparation, which may influence strain characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…The determined strain is compared to reference metrology and discussed with respect to recently published simulation results. 5,6 2 Experimental Details For this study, nanosheet GAA nFETs were manufactured in a very similar manner to what was published earlier. 2 The nanosheet stack is composed of alternating Si ð1−xÞ Ge x and Si layers, three each, grown on a Si substrate.…”

Section: Introductionmentioning

confidence: 99%

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In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing

Schmidt

Durfee

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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In-line Raman spectroscopy for compositional and strain metrology throughout frontend-of-line (FEOL) manufacturing of next-generation gate-all-around nanosheet field-effect transistors is presented. Thin and alternating layers of fully strained pseudomorphic Si ð1−xÞ Ge x and Si were grown epitaxially on a Si substrate and subsequently patterned. Intentional strain variations were introduced by changing the Ge content (x ¼ 0.25, 0.35, 0.50). Polarization-dependent in-line Raman spectroscopy was employed to characterize and quantify the strain evolution of Si and Si ð1−xÞ Ge x nanosheets throughout FEOL processing by focusing on the analysis of Si-Si and Si-Ge optical phonon modes. To evaluate the accuracy of the Raman metrology results, strain reference data were acquired by non-destructive high-resolution x-ray diffraction and from destructive lattice deformation maps using precession electron diffraction. It was found that the germanium-alloy composition as well as Si and Si ð1−xÞ Ge x strain obtained by Raman spectroscopy are in very good agreement with reference metrology and follow trends of previously published simulations.

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Section: (E) Shows the Correlation Plotmentioning

confidence: 99%

Section: (E) Shows the Correlation Plotmentioning

confidence: 99%

Section: Raman Strain Monitoringmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing

Schmidt

Durfee

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Koelling

Wuetz

et al. 2022

Adv Materials Inter

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yields two-dimensional projections and hence does not resolve the third dimension of the interface.Atom probe tomography (APT) with its capability of imaging the local chemistry in three-dimensions at the near atomic scale is a prime candidate for achieving atomic-scale characterization of buried interfaces. [12][13][14][15] However, limitations arising from the comparatively simple algorithms to reconstruct APT data are known to cause significant aberrations near interfaces, limiting accuracy. [12,[16][17][18] One way to address this issue is to improve APT data reconstruction using simulations or calibrations from electron tomography. [19,20] Both approaches are however time consuming and rely on information not readily available from an APT analysis.Here, we propose an alternative approach. Instead of trying to correctly reconstruct the entire volume analyzed in the tomography, we develop a protocol that allows us to choose a set of reconstruction parameters for one interface at a time by combining brute force search with a simple, standard reconstruction algorithm [16] from data exclusively acquired during APT. We present a fully automated process that is highly reproducible and enables us to characterize interface widths and roughness on a sub-nanometer scale.

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Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy

Li,

Bi,

Dong

et al. 2024

Electron

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Three‐dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low‐power and high‐performance computing in integrated circuits. Observing and accurately measuring strain in Si/SiGe heterojunctions is critical to increasing carrier mobility and improving device performance. Transmission electron microscopy (TEM) with high spatial resolution and analytical capabilities provides technical support for atomic‐scale strain measurement and promotes significant progress in strain mapping technology. This paper reviews atomic‐scale strain analysis for advanced Si/SiGe heterostructure based on TEM techniques. Convergent‐beam electron diffraction, nano‐beam electron diffraction, dark‐field electron holography, and high‐resolution TEM with geometrical phase analysis, are comprehensively discussed in terms of spatial resolution, strain precision, field of view, reference position, and data processing. Also, the advantages and critical issues of these strain analysis methods based on the TEM technique are summarized, and the future direction of TEM techniques in the related areas is prospected.

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Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors

Cited by 21 publications

References 2 publications

In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing

In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing

Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy

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