“…The designed MPD is based on the cantilever-structured AlGaN/GaN high-electronmobility transistor (HEMT), in which a magnetic thin film ((Fe 90 Co 10 ) 78 Si 12 B 10 ) is deposited on the front end of the cantilever. [37][38][39][40] The enlarged part is the schematic cross-section of the AlGaN/GaN HEMT, where from top to bottom are AlGaN, AlN, GaN, and Si substrates. The thicknesses of AlGaN, AlN, and GaN layers are 30 nm, 1 nm, and 4.3 µm, respectively, and the active region of MPD is 34 × 34 µm 2 , as shown in Supplementary Table S1.…”