1994
DOI: 10.1103/physrevlett.73.2236
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Imaging of Misfit Dislocation Formation in Strained Layer Heteroepitaxy by Ultrahigh Vacuum Scanning Tunneling Microscopy

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Cited by 49 publications
(13 citation statements)
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“…4͒, where on the narrow terraces there is not enough space for the steps to wind up around the threading dislocations. The observed highly terraced surface structure results from the dislocation glide processes during strain relaxation, 6 and is quite typical for strained-layer heteroepitaxy. It is why for lattice-mismatched MBE of other semiconductors, a spiral type of growth mode is not observed even for high TD densities, with the exception of the highly mismatched GaSb/GaAs system.…”
mentioning
confidence: 99%
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“…4͒, where on the narrow terraces there is not enough space for the steps to wind up around the threading dislocations. The observed highly terraced surface structure results from the dislocation glide processes during strain relaxation, 6 and is quite typical for strained-layer heteroepitaxy. It is why for lattice-mismatched MBE of other semiconductors, a spiral type of growth mode is not observed even for high TD densities, with the exception of the highly mismatched GaSb/GaAs system.…”
mentioning
confidence: 99%
“…This observation confirms our previous strain relaxation model, in which the kinetics of strain relaxation for EuTe on PbTe ͑111͒ were determined mainly by TD multiplication, with an onset at about 150 Å EuTe layer thickness. 6 In addition, there is a striking difference in the surface structure of the 2000 Å PbTe layer on EuTe compared to that of the thick PbTe layers on BaF 2 . In spite of the very high TD density, no growth spirals are observed on this surface.…”
mentioning
confidence: 99%
“…The shortest Burgers vector b is of 1 2 h1 1 0i type, and has an angle of 54:7 against the (1 1 1) surface [7]. As shown in Fig …”
Section: Resultsmentioning
confidence: 96%
“…The appearance of these surface step lines indicates the onset of strain relaxation, and thus the critical layer thickness can be detected with high precision. [29] The information on the critical layer thickness is particularly important to our magnetic studies, since we would like to avoid misfit dislocations at interfaces.…”
Section: Mbe Growth Of Eute/pbte Superlatticesmentioning
confidence: 99%
“…[33] These x-ray results are in good agreement with STM and TEM studies. [29,30] Before presenting the spin structure of EuTe in our SLs, we will review the spin structure of bulk EuTe as a function of temperature and magnetic field. In zero field, EuTe makes a phase transition from the paramagnetic phase to the type-II antiferromagnetic phase at 9.8 K. [14] The type-II antiferromagnetic order is represented by ferromagnetic spin alignment within the (111) planes, the moments of adjacent planes being antiparallel (see Fig.3-1 …”
Section: X-ray Diffractionmentioning
confidence: 99%