“…After standard cleaning, 400 nm wet thermal silicon oxide was grown at 1000 • C in order to obtain high densities of DNA acceptor endings, OH groups, at the surface [13]. The interdigitated Al fingers were realized on top of the oxide by lift-off process involving positive photo-resist deposition, optical mask photo-definition, etch of illuminated resist, 500 nm thick aluminum evaporated and removal of remaining resist and Al residues.…”