Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Green, J. E.; Loh, W.S.; Marshall, Andrew; Ng, B. K.; Tozer, R.C.; David, Jairo; Soloviev, Stanislav I.; Sandvik, Peter

doi:10.1109/ted.2012.2185499

Cited by 14 publications

(8 citation statements)

References 17 publications

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“…Several methods have been proposed to determine the impact ionization coefficients in semiconductor materials, and the most typical one is to utilize photomultiplication current of a p-n diode under illumination [31]. One can find several pioneering reports on the determination of impact ionization coefficients in SiC [32][33][34][35][36][37]. However, we need to revisit this subject because a breakdown voltage calculated with a reported set of impact ionization coefficients often exhibits significant deviation from an experimental value (sometimes the calculated breakdown voltage is lower than the experimental value).…”

Section: High-voltage Sic Power Devices and Unaddressed Issuesmentioning

confidence: 99%

“…The photomultiplication method has been employed to determine the impact ionization coefficients in SiC, and the typical results reported in the literature are summarized in figure 14 [32][33][34][35][36]98]. Note that these ionization coefficients were those along nearly 〈0 0 0 1〉 because SiC p-n diodes fabricated on offaxis (0 0 0 1) substrates were used in those studies.…”

Section: Impact Ionization Coefficients and Critical Electric Field S...mentioning

confidence: 99%

“…Figure 14. Typical impact ionization coefficients of electrons and holes in SiC reported in the literature[32][33][34][35][36]98]. Note that these ionization coefficients are those along nearly 〈0 0 0 1〉 because SiC p-n diodes fabricated on off-axis (0 0 0 1) substrates were used in those studies.…”

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confidence: 99%

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Carrier lifetime and breakdown phenomena in SiC power device material

Kimoto¹,

Niwa²,

Okuda³

et al. 2018

J. Phys. D: Appl. Phys.

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Recent progress and current understanding of carrier lifetimes and avalanche phenomena in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the Z1/2 center, has been identified to be the primary carrier lifetime killer in SiC. The VC defects can be eliminated by the introduction of excess carbon atoms followed by carbon diffusion in the bulk region. The true bulk lifetime after VC elimination was estimated to be approximately 110 µs. The doping dependence of carrier lifetimes in n- and p-type SiC is also presented. The impact ionization coefficients of electrons and holes were extracted in the temperature range of 298 to 423 K. The intrinsic critical electric field strength of SiC〈0 0 0 1〉 was determined to be 2.0, 2.5, and 3.3 MV cm−1 for doping densities of 1 × 1015, 1 × 1016, and 1 × 1017 cm−3, respectively, at room temperature; it slightly increased at elevated temperature. The obtained set of impact ionization coefficients has enabled us to accurately predict the breakdown voltage of SiC devices, including its temperature dependence. Due to the unusually low impact ionization coefficient of electrons, the breakdown voltage of a SiC p+n junction is about 6%–9% higher than that of an n+p junction with a given doping density.

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Section: High-voltage Sic Power Devices and Unaddressed Issuesmentioning

confidence: 99%

Section: Impact Ionization Coefficients and Critical Electric Field S...mentioning

confidence: 99%

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Carrier lifetime and breakdown phenomena in SiC power device material

Kimoto¹,

Niwa²,

Okuda³

et al. 2018

J. Phys. D: Appl. Phys.

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“…Accordingly, the avalanche recombination model was considered. Variety fitting parameters are reported [17][18][19][20][21][22][23][24]. We used Niwa's parameter [23] based on Okuto-Crowell model [25] shown in eq.…”

Section: Avalanche Recombinationmentioning

confidence: 99%

Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

Hasegawa

Pace

Phung

et al. 2017

IEEE Trans. Electron Devices

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We investigated a methodology to design light-triggered thyristors thanks to TCAD. The simulation model accuracy, especially the holding current and the minimum incident light intensity to turn-on, were compared with experimental results. The influence of SiC epitaxial layer lifetime and the incident light properties (wavelength and intensity) on the optically triggered 4H-SiC thyristor characteristics have been studied by simulation. We considered the wavelength dependency of quantum efficiency, penetration depth and photon energy. The holding current and turn-on time depends on the lifetime. The minimum intensity to turn-on the device significantly depends on the wavelength. This intensity becomes less than 0.003 times when the wavelength changed from 380 nm to 325 nm. In addition, the breakover voltage is affected by the constant incident light even if the intensity is tiny.

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“…Impact ionization coefficients are important parameters in designing and characterization of semiconductor power devices because they determine the breakdown voltage. Although several reports on the impact ionization coefficients in SiC are available, [8][9][10][11][12][13][14][15][16] a few problems such as an inadequate selection of illumination wavelengths in the measurement setup and simplified assumptions of the electric field distribution led to an inaccuracy in the obtained values of the impact ionization coefficients. The authors' group carefully revisited this issue and successfully obtained impact ionization coefficients in a wide electric field range.…”

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confidence: 99%

Impact ionization coefficients of 4H-SiC in a wide temperature range

Zhao

Niwa

Kimoto

2018

Jpn. J. Appl. Phys.

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The temperature dependence of impact ionization coefficients of electrons and holes along 4H-SiC 〈0001〉 was determined in a wide temperature range from 156 K to 561 K. Photomultiplication measurements were conducted using several types of 4H-SiC photodiodes (PDs) with different structures under high vacuum conditions. The hole ionization coefficient showed a negative temperature dependence, which can be attributed to enhanced phonon scattering at elevated temperatures. Temperature dependence of the electron ionization coefficient was small, and this result may be ascribed to the simultaneous effects of enhanced phonon scattering and shrinkage of minigaps in the conduction band. Accuracy of the obtained results was verified by comparing the calculated breakdown voltage with the experimental breakdown voltage of various diodes.

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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Cited by 14 publications

References 17 publications

Carrier lifetime and breakdown phenomena in SiC power device material

Carrier lifetime and breakdown phenomena in SiC power device material

Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

Impact ionization coefficients of 4H-SiC in a wide temperature range

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