Impact ionization of excitons in GaAs

Bludau, Wolfgang; Wagner, Elmar

doi:10.1103/physrevb.13.5410

Cited by 90 publications

(28 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The excitonic PL spectra consist of a series of lines: [Be, X], X e1−hh1 and X e1−lh1 . The binding energy of bound exciton E(X e1−hh1 ) − E[Be, X] ≈ 3.85 meV nicely coincides with other experimental findings for GaAs/AlAs (3.7 meV) [9], and for GaAs/Al 0.33 Ga 0.67 As (3.8 meV) [11] quantum wells, which is larger than for GaAs (2.9 meV) [12]. Modeling the lineshape Γ we assumed that the excitonic PL line width broaden- Fig.…”

Section: Photoluminescence Spectra and Discussionsupporting

confidence: 88%

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Kundrotas

Čerškus²,

Ašmontas³

et al. 2005

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

Section: Photoluminescence Spectra and Discussionsupporting

confidence: 88%

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Kundrotas

Čerškus²,

Ašmontas³

et al. 2005

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…We attribute the brightening effect to the elimination of nearsurface fields in the GaAs and InP samples under optical illumination [58]. There is evidence that very small fields, on the order of V/cm, can substantially quench fluorescence [59]. We do not observe this effect in CdTe, which is a true bulk sample rather than a few-micron-thick film.…”

Section: Appendix C: Surface Depletion Effectsmentioning

confidence: 56%

Longitudinal spin relaxation of donor-bound electrons in direct band-gap semiconductors

et al. 2016

View full text Add to dashboard Cite

We measure the donor-bound electron longitudinal spin-relaxation time (T1) as a function of magnetic field (B) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum T1 of 1.4 ms, 0.4 ms and 1.2 ms, respectively. In GaAs and InP at low magnetic field, up to ∼2 T, the spin-relaxation mechanism is strongly density and temperature dependent and is attributed to the random precession of the electron spin in hyperfine fields caused by the lattice nuclear spins. In all three semiconductors at high magnetic field, we observe a power-law dependence T1 ∝ B −ν with 3 ν 4. Our theory predicts that the direct spin-phonon interaction is important in all three materials in this regime in contrast to quantum dot structures. In addition, the "admixture" mechanism caused by Dresselhaus spin-orbit coupling combined with single-phonon processes has a comparable contribution in GaAs. We find excellent agreement between high-field theory and experiment for GaAs and CdTe with no free parameters, however a significant discrepancy exists for InP.

show abstract

“…5 The effect of an external magnetic field on filaments has been investigated by a scanning laser microscope. [9][10][11] Ryabushkin et al 12 reported a strong spatial variation, in a direction perpendicular to the current flow, of photoluminescence emitted by n-GaAs epitaxial layers in the filamentary current regime. Irradiation destabilizes the current flow especially at the filament borders.…”

Section: H Kostialmentioning

confidence: 99%

Visualization of current filaments in n-GaAs by photoluminescence quenching

Eberle

Hirschinger

Margull

et al. 1996

Applied Physics Letters

View full text Add to dashboard Cite

Hot electrons in semiconductors are known to quench radiative impurity and exciton recombination photoluminescence. This effect has been applied in a low invasive technique to determine the spatial form of current filaments generated by impurity breakdown in high purity n-GaAs epitaxial layers at low temperatures. Observations on samples with Corbino disc contacts clearly demonstrate symmetry breaking and self-organization by the current filamentation.

show abstract

Impact ionization of excitons in GaAs

Cited by 90 publications

References 19 publications

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Longitudinal spin relaxation of donor-bound electrons in direct band-gap semiconductors

Visualization of current filaments in n-GaAs by photoluminescence quenching

Contact Info

Product

Resources

About