Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs

Bae

et al. 2020

The effects of proton irradiation dose on the DC and switching properties of high aluminum content, polarization-doped field effect transistors (POLFETs) were studied. The POLFETs were irradiated at proton energy of 10 MeV at fluences of 1 × 1014 cm−2 and 3 × 1014 cm−2. The DC saturation current exhibited a 21 and 36% reduction at fluences of 1 × 1014 cm−2 and 3 × 1014 cm−2, respectively. The carrier removal rates for this energy was 677 cm−1. However, switching current at 100 kHz demonstrated no change, with near ideal performance, as opposed to significant degradation in their GaN HEMT counterparts. This near ideal performance is attributed to the volume of the 3D electron gas in the POLFETs reducing the likelihood of negatively impacting scattering events, as opposed to the narrow 2D electron gas of the HEMT. The DC degradation and carrier removal rates are on par with reported traditional GaN HEMTs, but the switching performance is exceptionally improved.

mentioning

confidence: 99%

Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors

Bae

et al. 2020

“…Alpha particle radiation due to its heavier mass presents a larger risk to both electronics and life forms in space than proton irradiation. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Alpha particle events in GaN High Electron Mobility Transistors (HEMTs) have been studied previously, although not nearly as well as proton irradiation. Danesin et al reported on 2 MeV alpha irradiation and noted a 70% reduction on drain current at a fluence of 10 14 cm −2 .…”

mentioning

confidence: 99%

Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors

Bae

et al. 2020

Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 × 1013 cm−2 and 3 × 1013 cm−2, respectively. Carrier removal rates in the range of 2520 cm−1 and 7100 cm−1 were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects.

“…AlGaN/GaN high electron mobility transistors (HEMTs) along with SiC transistors and diodes have become the backbone of power management and RF applications for extraterrestrial applications due to their wide bandgap, high critical electric field, low switching loss, and intrinsic radiation hardness. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] Another key application is the insertion of these types of devices into instrumentation for nuclear fission and fusion reactors. The still-under-construction International Thermonuclear Experimental Reactor (ITER) is expected to produce neutron radiation with energies in the range of 2-14 MeV and fluences of up to 10 14 cm −2 per second.…”

mentioning

confidence: 99%

Neutron Irradiation of AlGaN Polarization Doped Field Effect Transistors

Sedlack

et al. 2020

AlGaN polarization doped field effect transistors (POLFETs) were irradiated with neutrons at an average energy of 4.5 MeV and doses of 5 × 1010 n/cm−2 and 5 × 1011 n/cm−2. Only 1% and 3% reduction in DC current was noted at these fluences, respectively. Drain and gate leakage current was only found to have degraded at 5 × 1011 n/cm−2, lower fluences producing nominal changes. 100 kHz operation demonstrated near ideal performance prior to irradiation, and only slight degradation after for most stringent duty cycles and highest gate voltages used in this study.