Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene

Kim, Hyun‐Seok; Lu, Kuangye; Liu, Yunpeng; Kum, Hyun; Kim, Ki-Seok; Qiao, Kuan; Bae, Sang Hoon; Lee, Sang-Ho; Ji, You Jin; Kim, Ki‐Hyun; Paik, Hanjong; Xie, Saien; Shin, Hyeong Cheol; Choi, Chanyeol; Lee, June Hyuk; Dong, C.; Robinson, Joshua A.; Lee, Jae Hyun; Ahn, Juhyeon; Yeom, Geun Young; Schlom, Darrell G.; Kim, Jeehwan

doi:10.1021/acsnano.1c03296

Cited by 72 publications

(95 citation statements)

References 42 publications

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“…Here we experimentally demonstrate that pinhole-seeded lateral epitaxy explains the growth of atomically smooth, exfoliatable GaSb films on a graphene-terminated GaSb (001) substrate. Using the same graphene transfer procedures as previous reports 1 , 3 , 13 , we find that pinholes are created by native oxide desorption from the substrate. GaSb nucleates directly from the underlying GaSb substrate in the pinholes, followed by lateral overgrowth and coalescence of a continuous film.…”

Section: Introductionmentioning

confidence: 69%

“…Note that we use the same HCl etching procedure that has been used previously for transferred graphene on III-Vs 1 . Additionally, recent XPS measurements show there are oxide satellites in the C 1 s and As 3 d core levels for both wet and dry transferred graphene on GaAs (001) 13 . Therefore, it appears that native oxides trapped at graphene/III-V interfaces are common to both wet (aqueous) and dry (in air) 31 transfer procedures, due to the reactivity of III-V surfaces 32 .…”

Section: Resultsmentioning

confidence: 94%

“…Figure 1 (a, b) shows reflection high energy electron diffraction (RHEED) patterns tracking the MBE-growth of GaSb directly on GaSb (001) and on graphene-terminated GaSb (001). On this sample, we layer transfer graphene on half of the GaSb (001) substrate using a wet transfer procedure similar to the one that has previously been used for remote epitaxy of GaAs, including an HCl etch to remove native oxides from the substrate 1 , 13 (Methods). HCl 23 – 25 and HCl+H 2 O 2 solutions 26 , 27 are also commonly used to etch native oxides from GaSb.…”

Section: Resultsmentioning

confidence: 99%

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Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

et al. 2022

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Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks.

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Section: Introductionmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

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Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

et al. 2022

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“…Monolayer graphene pieces of size 1.3 cm × 1.3 cm were transferred onto the as-grown GaN/sapphire templates using a wet transfer procedure, described elsewhere [ 25 ]. Since graphene transfer might result in the formation of defects [ 19 , 20 , 21 ], the surface of the transferred graphene layer was checked by SEM. While most of the graphene layer surface was smooth, some wrinkles and possible few-layer zones were observed ( Figure 1 a).…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, to ensure interaction between the substrate and the epilayer, the graphene interlayer thickness must not exceed two monolayers [ 1 , 9 , 11 ], which restrains the graphene layer to either monolayer or bilayer thickness. Meanwhile, depending on the transfer method, cracks, wrinkles, residue, and contamination might decrease the quality of the graphene layer [ 19 , 20 , 21 ], and significantly affect the epilayer growth.…”

Section: Introductionmentioning

confidence: 99%

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

et al. 2022

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The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.

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Design of p‐WSe₂/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

Lee

Park

Youn

et al. 2021

Adv Funct Materials

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Van der Waals (vdW) 2D/3D heterostructures are extensively studied for high-performance photodetector applications. Until now, the type of 2D materials has been the primary area of interest rather than the design of 3D semiconductors. In this study, high-speed broadband photodiodes (PDs) based on vdW p-WSe 2 /n-Ge heterojunctions are reported, and the performance compared with different n-Ge regions formed via the ion-implantation process. The fabricated PD with a typical long n-Ge region and low doping concentration responds to a broad spectral range from visible to infrared near 1550 nm with a response time of ≈3 µs and responsivity of 1.3 A W −1 . The inferior responsivity of PDs with short n-Ge regions can be improved as demonstrated by experimental results and process simulation. Density functional theory calculations are performed to estimate the variation of the energy band structures with the doping concentration of n-Ge. Fast photoresponse and efficient carrier separation across the heterojunction can be expected regardless of the n-Ge doping concentration. Based on the experimental results together with theoretical band structure and process simulation, it is shown that the heterojunction with an optimized n-Ge design is a promising high-speed broadband photodetector that can be implemented with complementary metal-oxidesemiconductor design and fabrication processes.

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Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene

Cited by 72 publications

References 42 publications

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Design of p‐WSe₂/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

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Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene

Cited by 72 publications

References 42 publications

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

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Design of p‐WSe₂/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors