Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

Fenouillet-Béranger, C.; Perreau, P.; Denorme, S.; Tosti, L.; Andrieu, F.; Weber, O.; Barnola, S.; Arvet, C.; Campidelli, Y.; Haendler, S.; Beneyton, R.; Perrot, C.; Buttet, C. de; Pham-Nguyen, Loan; Leverd, F.; Gouraud, P.; Abbate, F.; Baron, F. A.; Torres, A.; Laviron, C.; Pinzelli, L.; Vetier, J.; Borowiak, C.; Margain, A.; Delprat, D.; Boedt, F.; Bourdelle, K.K.; Nguyen, B.-Y.; Faynot, O.; Skotnicki, T.

doi:10.1109/essderc.2009.5331588

Cited by 19 publications

(11 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The thin BOX device also becomes more suitable for implementing back‐gate biasing schemes used for tuning device characteristics . The modulation of the threshold voltage ( V th ) can be achieved with or without back‐gate biasing, constant or connected to drain bias . If the front and back gates (BOX being the back gate oxide) are connected, the device will operate in quasi‐double‐gate mode or also called asymmetric double‐gate regime.…”

Section: Ultrathin Body and Thin Boxmentioning

confidence: 99%

Silicon‐on‐insulator MOSFETs models in analog/RF domain

Raskin

2013

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARYSeveral physical phenomena specific to silicon-on-insulator metal-oxide-semiconductor field-effect transistors, such as floating body effects, self-heating, and substrate coupling, are described and modeled. Small-signal equivalent circuit of ultra-thin body and thin buried oxide and fin field effect transistor (FinFET) are extracted, and their radio frequency figures of merit as well as their advantages and limitations are presented. We demonstrate the importance of performing wideband characterization at the early stage of the technology development in order to identify the device weaknesses and come up with technological solutions to overcome those. With the ongoing downscaling of the metal-oxide-semiconductor devices, the surrounding of the transistor, that is, the contacts, the access lines, and the substrate, starts to play a major role on the transistor behavior. There is an urgent need to develop adequate models for the new generation of devices valid over a wide frequency band.

show abstract

Section: Ultrathin Body and Thin Boxmentioning

confidence: 99%

Silicon‐on‐insulator MOSFETs models in analog/RF domain

Raskin

2013

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…Finally, the FDSOI technology offers better scalability for nanometer scale era than both bulk and PDSOI technologies. This technology provides high performances, low power consumption and improved process variability [23,24] which are all key issues for highly integrated technologies intended for commercial market. However, its TID sensitivity is strongly governed by oxide-charge trapping in the BOX which modifies the main electrical characteristics due to electrostatic coupling effects inherent to the FDSOI structure [11].…”

Section: E Fully Depleted Soi Technologymentioning

confidence: 99%

High total ionizing dose and temperature effects on micro- and nano-electronic devices

Gaillardin

Martinez

Girard

et al. 2013

2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications (ANIMM

Self Cite

View full text Add to dashboard Cite

This paper investigates the vulnerability of several micro-and nano-electronic technologies to a mixed harsh environment including high total ionizing dose at MGy levels and high temperature. Such operating conditions have been revealed recently for several applications like new security systems in existing or future nuclear power plants, fusion experiments, or deep space missions. In this work, the competing effects already reported in literature of ionizing radiations and temperature are characterized in elementary devices made of MOS transistors from several technologies. First, devices are irradiated using a radiation laboratory X-ray source up to MGy dose levels at room temperature. Devices are grounded during irradiation to simulate a circuit which waits for a wake up signal, representing most of the lifetime of an integrated circuit operating in a harsh environment. Devices are then annealed at several temperatures to discuss the post-irradiation behavior and to determine whether an elevated temperature is an issue or not for circuit function in mixed harsh environments.

show abstract

“…Thin BOX device also becomes more suitable for implementing back-gate biasing schemes used for tuning device characteristics [3], [4]. The modulation of the threshold voltage (V Th ) can be achieved with [5] or without [6], [7] back-gate biasing, constant or connected to drain bias [5], [8].…”

Section: Introductionmentioning

confidence: 99%

Emulation of double gate transistor in ultra-thin body with thin buried oxide SOI MOSFETs

Arshad

Hashim

2013

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

View full text Add to dashboard Cite

Thin body Silicon-on-Insulator (SOI) devices are promising technology for extending the device scalability as projected in ITRS, thanks to immunity to short channel effects. Further improvement can be achieved when the device incorporated with thin buried oxide (BOX) since it allows suppression of fringing electric fields through the BOX thus improving front-gate-to-channel controllability and reducing DIBL. Thin BOX is also suitable for emulation of double-gate (implementing back-gate biasing) schemes used for tuning device characteristics. Thus, in this paper, from the advantages of double gate transistor, we investigate by using ATLAS 2D-simulations the emulation of double gate transistor with bottom contact (underneath the substrate) and top contact (from the top through the silicon and BOX) for both digital and analog/RF figures of merit in ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Improvement in performance simply can be achieved with such configurations. Keywords:Emulation double gate, Thin body and thin buried oxide (UTBB), SOI MOSFETs.I.

show abstract

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

Cited by 19 publications

References 0 publications

Silicon‐on‐insulator MOSFETs models in analog/RF domain

Silicon‐on‐insulator MOSFETs models in analog/RF domain

High total ionizing dose and temperature effects on micro- and nano-electronic devices

Emulation of double gate transistor in ultra-thin body with thin buried oxide SOI MOSFETs

Contact Info

Product

Resources

About