Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate

Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal A.; Sadaf, Sharif Md.; Velpula, Ravi Teja; Nguyen, Hieu Pham Trung

doi:10.1364/ao.470083

Cited by 7 publications

(2 citation statements)

References 30 publications

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“…ε QB and ε QW represent dielectric constants of the barrier and well, respectively, and their respective widths are t QW and t QB . Because of the poor electrostatic field in the well, the electrons and holes are confined effectively [25]. Equation ( 4) depicts that E QB and E QW are directly proportional to each other.…”

Section: Resultsmentioning

confidence: 99%

“…Additionally, due to Al abundant EBL, magnesium doping efficiency is also impacted by high acceptor activation energy [21,22]. To mitigate the aforesaid challenges, various LED structures with re-designed EBL and QW have been addressed [23][24][25][26][27]. However, only a few challenges were able to be reduced, hence it is favorable to create EBL-free UV-LEDs resulting in an enhanced flow of carriers.…”

Section: Introductionmentioning

confidence: 99%

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Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Das,

Lenka,

Talukdar

et al. 2023

Micromachines

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In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Das,

Lenka,

Talukdar

et al. 2023

Micromachines

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Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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Over the last decades, continuous technological advancements have been made in III‐nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement of traditional light sources. With the emission wavelength covering the entire visible spectrum, InGaN LEDs find various applications such as solid‐state lightings, full‐color displays, and visible light communication. However, the quantum efficiency of InGaN LEDs suffers from a dramatic decline as the emission wavelength extends from blue to green–red region. This issue restrains the lighting and display applications based on the color‐mixing monolithic lighting source system. In this review, the recent breakthroughs in long‐wavelength InGaN LEDs, together with the challenges and approaches to realize high‐indium‐composition InGaN epilayers, are introduced. These cover the different epitaxial substrates, nucleation layers, and epitaxial structures, especially multiple quantum wells active region. The related studies are also discussed to improve the long‐wavelength LEDs performance from the aspect of crystal quality, growth orientation, carrier‐injection, and 3D nanostructures. Finally, current status and perspectives for future long‐wavelength LEDs development are proposed briefly.

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Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

et al. 2022

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A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano-hafnium oxidesilica based LED encapsulation material that promises enhanced package LED efficiency by 29.05% and indicates a reduction in the efficiency droop (0.491%). The enhanced power and efficiency of the LED with HfO2/SiO2-doped bilayer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano-HfO2/SiO2 not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.

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Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate

Cited by 7 publications

References 30 publications

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

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