Impact of Al and Ga co-doping with different proportion in ZnO thin film by DC magnetron sputtering

Sahoo, Susanta Kumar; Gupta, Chandan Ashis; Singh, Udai P.

doi:10.1007/s10854-016-4679-y

Cited by 22 publications

(3 citation statements)

References 30 publications

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“…In that context, the co-doping of ZnO NWs has emerged as an additional route to further optimize their optical and electrical properties, which is required when they are used as electron-transporting materials for nanostructured solar cells or as photocatalysts for water remediation. While a couple of reports have investigated the co-doping of ZnO thin films − and the growth of ZnO NWs by CBD on Al- and Ga-codoped ZnO seed layers, the implementation of the co-doping by CBD is still open. Moreover, the massive incorporation of hydrogen during the CBD process of ZnO NWs is expected to interfere with the intentional doping, but this issue has never been explored so far.…”

Section: Introductionmentioning

confidence: 99%

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

et al. 2023

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The simultaneous co-doping of ZnO nanowires grown by chemical bath deposition is of high interest for a large number of engineering devices, but the process conditions required and the resulting physicochemical processes are still largely unknown. Herein, we show that the simultaneous co-doping of ZnO nanowires with Al and Ga following the addition of Al(NO3)3 and Ga(NO3)3 in the chemical bath operates in a narrow range of conditions in the high-pH region, where the adsorption processes of respective Al(OH)4 – and Ga(OH4)− complexes on the positively charged m-plane sidewalls are driven by attractive electrostatic forces. The structural morphology and properties of ZnO nanowires are significantly affected by the co-doping and mainly governed by the effect of Al(III) species. The incorporation processes of Al and Ga dopants are characterized by significant interplay effects, and the amount of incorporated Ga dopants into ZnO nanowires is found to be larger than the amount of incorporated Al dopants owing to energetic considerations. The Al and Ga dopants are located in the bulk of ZnO nanowires, but a part of Al and Ga lies on their surfaces, their incorporation processes in the bulk being enhanced by thermal annealing under oxygen atmosphere. Eventually, the Al and Ga dopants directly affect the incorporation of hydrogen-related defects, notably by annihilating the formation of VZn-nH defect complexes. These findings present an efficient strategy to proceed with the co-doping of ZnO nanowires grown by chemical bath deposition, opening perspectives to control their electronic structure properties with a higher precision.

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Section: Introductionmentioning

confidence: 99%

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

et al. 2023

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“…Notably, GAZO can obtain the advantages of both AZO and GZO [12]. The combination of the two materials forms GAZO, with higher optical and electrical properties than the single materials [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Chang

Chan

et al. 2022

Coatings

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Low-emissivity glass has high transmission in the visible region and high reflectivity in the infrared region. Gallium and aluminum codoped zinc oxide (GAZO) processed by hydrogen (H2) plasma treatment holds promise for fabricating good low-emissivity glass. The applied processing time is one of the key factors in plasma treatment. The GAZO films were prepared by in-line sputtering at room temperature, and the effect of using different plasma processing times on the structural, electrical and optical properties of the films were surveyed. Experimental results indicate that H2 plasma treatment of GAZO film samples indeed influenced the structure, optical and electrical properties. An appropriate processing time can improve the electrical properties and reduce the emissivity of GAZO films. The optimum processing time is 5 min for plasma treatment of GAZO films. The electrical resistivity and emissivity of plasma-annealed films for 5 min decrease by 59% and 55% compared to those of as-deposited GAZO films. Values of 5.3 × 10−4 Ω-cm in electrical resistivity, 0.13 in emissivity and 94% in average optical transmittance in the visible wavelength region could be obtained for GAZO films after H2 treatment of 5 min in this work for low-emissivity glass applications.

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“…Zinc oxide (ZnO), which is one of the most important II-VI semiconductor materials, is semiconductor with a wide direct energy band gap of 3.37 eV [1]. At room temperature, ZnO has a hexagonal wurtzite-type structure and a natural n-type electrical conductivity; whereby changing the annealing conditions and doping, the resistivity may be adjusted by order of magnitude to 10 4 Ohmcm [2]. Recently, ZnO takes some important part of researching, because it has high chemical and mechanical stability that allows it to be used in photovoltaic cells [3]; his wide direct band gap makes it transparent for a large wavelength range in the solar spectrum [4]; ZnO has considerable thermal stability in hydrogen plasma atmosphere, low electrical resistivity [5], and low cost price.…”

Section: Introductionmentioning

confidence: 99%

Impact of Deposition Rate on the Structural, Optical, and Electrical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Solar Spray Pyrolysis Method

2021

Nanosistemi, Nanomateriali, Nanotehnologii

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Bedreddine MAAOUI, Yacine AOUN, and Said BENRAMACHE джували за допомогою рентґенівської дифракції (XRD), ультрафіолетової та видимої спектроскопії та чотироточкової зондової методи відповідно. Аналіза властивостей показує, що плівки ZnO є полікристалічними з переважною орієнтацією (002) та кристалізуються у фазі вюртцитового типу. Розмір зерна збільшується до 23 нм, потім зменшується до досягнення 16 нм. Величина забороненої енергетичної зони з прямими переходами зменшується від 3,30 до 3,28 еВ, коли товщина збільшується від 126 до 148 нм. Виявлена електропровідність змінюється залежно від товщини плівки.

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Impact of Al and Ga co-doping with different proportion in ZnO thin film by DC magnetron sputtering

Cited by 22 publications

References 30 publications

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass

Impact of Deposition Rate on the Structural, Optical, and Electrical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Solar Spray Pyrolysis Method

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