Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La₂O₃ Gated MOS Device

Abstract

The impacts of Mg, SrO or BaO capping, alkali earth oxides, into La 2 O 3 MOS devices have been examined. A roll-off characteristic in flat-band voltage (V fb ) dependence on equivalent oxide thickness (EOT) has been suppressed with Mg capping and incorporation. On the other hand, capping with SrO and BaO have showed roll-up characteristics below an EOT of 1.2 nm. The main reason can be considered as the change in the number of fixed charges. No notable change in leakage current (J g ) has been observed.