Impact of an electromagnetic threat on cyberspace and cyber security against EM threat

Punitha, L.; Saravanan, T.; Varnika, N.

doi:10.1109/icices.2016.7518853

Cited by 3 publications

(2 citation statements)

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“…Сергєєв 1,2 , К. Шункєєв 2 , Н. Жантуріна 2 , А.Л. Соловйов 3 1 Актюбінський авіаційний інститут імені Т. Бегельдінова, пр. Молдагулова, 39, 030012 Актобе, Казахстан…”

Section: моделювання руйнування P-n-переходу електромагнітними імпуль...unclassified

“…The emergence of such powerful EMP generators of "non-nuclear" origin has led to the creation of highly effective weapons that can be used for terrorist or criminal purposes to deliberately deliver electromagnetic strikes in order to disable the radio-electronic equipment (REE) of the alleged enemy by physically destroying its semiconductor components, or temporarily (suppression) of equipment malfunction in the form of a functional failure (Fig. 1) [3]. Note that lightninginduced EMP also poses a serious danger to modern electronic devices [4].…”

Section: Introductionmentioning

confidence: 99%

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Modeling the Destruction of the p-n Junction by Electromagnetic Pulses

Sergeyev,

Shunkeyev,

Zhanturina

et al. 2023

J. Nano- Electron. Phys.

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Within the framework of the density functional theory and methods of molecular dynamics, the process of destruction of a silicon p-n junction at the influence of an electromagnetic pulse (thermal effect) is considered. With an increase in the amplitude of the electromagnetic pulse, a nonlinearity of the mobility of quasiparticles arises and impact ionization processes occur, leading to the formation of various defects in the crystal lattice of the semiconductor. The evolution of the occurrence of point defects in a semiconductor by thermal deformation, as well as a further increase in their concentration, is shown. It is demonstrated that the primary passage of an electromagnetic pulse generates defects in a defect-free crystal. Further thermal impact of the pulse leads to an increase in the deviation of atoms, leading to the accumulation of defects and the destruction of the structure. With an increase in temperature, the p-n junction loses its rectifying properties and an instantaneous increase in the magnitude of the reverse current is observed due to the occurrence of an ionization current, which coincides in direction with the saturation current. It is revealed that thermal deformation significantly distorts the p-n junction profile. It was found that the destruction of the semiconductor structure occurs in the defect-free part of the crystal, and the defects stimulate destruction. In semiconductors doped with Li or Sr, the destruction time of the p-n junction increases due to the occupation of mobile Li or Sr ions by the formed silicon vacancies during the thermal action of the pulse. The results obtained can be useful in the development of semiconductor structures resistant to external influences of an electromagnetic pulse.

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Section: моделювання руйнування P-n-переходу електромагнітними імпуль...unclassified

Section: Introductionmentioning

confidence: 99%