Impact of annealing treatment before buffer layer deposition on Cu 2 ZnSn(S,Se) 4 solar cells

Hironiwa, Daisuke; Sakai, Nobuo; Kato, Takuya; Sugimoto, H.; Tang, Zeguo; Chantana, Jakapan; Minemoto, Takashi

doi:10.1016/j.tsf.2014.11.016

Cited by 34 publications

(38 citation statements)

References 5 publications

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“…Solar cells were annealed in N 2 atmosphere at 200 °C for 1 h and all the optical and electrical characterizations reported here are performed after the post annealing step. The beneficial impact of this post annealing step was already reported by several groups . Samples are named according to their rear contact type: with MoO 3 layer (S) and without MoO 3 layer (R).…”

Section: Methodsmentioning

confidence: 95%

Improvement of kesterite solar cell performance by solution synthesized MoO₃ interfacial layer

Ranjbar

Brammertz

Vermang

et al. 2016

Physica Status Solidi (a)

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In this study, an ultra‐thin MoO3 layer synthesized by a solution‐based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu2ZnSnSe4 (CZTSe) solar cell. Solar cells with 10 nm of MoO3 between Mo rear contact and CZTSe had larger minority carrier life time and open‐circuit voltage compared to the reference solar cells. Temperature dependent current density–voltage measurement indicated that the activation energy (EA) of the main recombination is higher (∼ 837 meV) in solar cells with MoO3 layer, as compared to conventional solar cells where EA ∼ 770 meV, indicating reduced interface recombination. A best efficiency of 7.1% was achieved for a SLG/Mo/MoO3/CZTSe/CdS/TCO solar cell compared to the reference solar cell SLG/Mo/CZTSe/CdS/TCO for which 5.9% efficiency was achieved.

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Section: Methodsmentioning

confidence: 95%

Improvement of kesterite solar cell performance by solution synthesized MoO₃ interfacial layer

Ranjbar

Brammertz

Vermang

et al. 2016

Physica Status Solidi (a)

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“…Most work has been focused on annealing of the bare CZTSSe absorber before further processing, while improvements have also been observed when annealing the CZTSe/CdS stack [3], as well as the complete device stack [3]. The studies in which the heat treatment is performed in an inert N 2 atmosphere focus on changes of the Na content in the absorber [6,7] and in the CZTSSe/CdS buffer layer region [7]. It is argued that the annealing treatment can be used to obtain an appropriate level of Na [7].…”

Section: Introductionmentioning

confidence: 99%

Surface modification through air annealing Cu2ZnSn(S,Se)4 absorbers

et al. 2017

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“…6 In general, several groups report beneficial effects of low temperature post deposition annealing either in air or inert atmosphere for kesterite based solar cells. [7][8][9] Already in CIGS, short air annealing is reported to improve solar cell performances due to oxygen related defect passivation and is used in devices with over 20% efficiency. 10,11 For kesterite, the aspect of low temperature annealing is especially interesting since recently an orderdisorder transition was observed after low-temperature annealing at around 260ºC or 200ºC for the pure sulfide (CZTS) or selenide (CZTSe) compound, respectively.…”

Section: Introductionmentioning

confidence: 99%

Complex Surface Chemistry of Kesterites: Cu/Zn Reordering after Low Temperature Postdeposition Annealing and Its Role in High Performance Devices

et al. 2015

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A detailed study explaining the beneficial effects of low temperature post deposition annealing combined with selective surface etchings for Cu 2 ZnSnSe 4 (CZTSe) based solar cells is presented. After performing a selective oxidizing surface etching to remove ZnSe secondary phases typically formed during the synthesis processes an additional 200ºC annealing step is necessary to increase device performance from below 3% power conversion efficiency up to 8.3% for the best case. This significant increase in efficiency can be explained by changes in the surface chemistry which results in strong improvement of the CdS/CZTSe heterojunction commonly used in this kind of absorber/buffer/window heterojunction solar cells. XPS measurements reveal that the 200ºC annealing promotes a Cu depletion and Zn enrichment of the etched CZTSe absorber surface relative to the CZTSe bulk. Raman measurements confirm a change in Cu/Zn ordering and increase in defect density. Furthermore, TEM microstructural investigations indicate a change of grain boundaries composition by a reduction of their Cu content after the 200ºC annealing treatment. Additionally, insights in the CdS/CZTSe interface are gained showing a significant amount of Cu in the CdS buffer layer which further helps the formation of a Cu-depleted surface and seems to play an important role in the formation of the pn-heterojunction.

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Impact of annealing treatment before buffer layer deposition on Cu 2 ZnSn(S,Se) 4 solar cells

Cited by 34 publications

References 5 publications

Improvement of kesterite solar cell performance by solution synthesized MoO₃ interfacial layer

Improvement of kesterite solar cell performance by solution synthesized MoO₃ interfacial layer

Surface modification through air annealing Cu2ZnSn(S,Se)4 absorbers

Complex Surface Chemistry of Kesterites: Cu/Zn Reordering after Low Temperature Postdeposition Annealing and Its Role in High Performance Devices

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Impact of annealing treatment before buffer layer deposition on Cu 2 ZnSn(S,Se) 4 solar cells

Cited by 34 publications

References 5 publications

Improvement of kesterite solar cell performance by solution synthesized MoO3 interfacial layer

Improvement of kesterite solar cell performance by solution synthesized MoO3 interfacial layer

Surface modification through air annealing Cu2ZnSn(S,Se)4 absorbers

Complex Surface Chemistry of Kesterites: Cu/Zn Reordering after Low Temperature Postdeposition Annealing and Its Role in High Performance Devices

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Product

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Improvement of kesterite solar cell performance by solution synthesized MoO₃ interfacial layer

Improvement of kesterite solar cell performance by solution synthesized MoO₃ interfacial layer