Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

Nguyen, Van Hoang; Sichanugrist, Porponth; Kato, S.; Usami, Noritaka

doi:10.1016/j.solmat.2017.03.013

Cited by 3 publications

(2 citation statements)

References 18 publications

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“…It is speculated that some areas of ordered SiNWs could be effectively passivated by the residual AAO, which exhibited a promising effective carrier lifetime upon post-deposition annealing. Van Hoang Nguyen et al [33] demonstrated that the effective carrier lifetime of SiNWs drastically increased upon post-deposition annealing under thermal treatment at about 650 • C. This is possibly due to the carriers easily diffusing because of a reduction in defects at the bottom of the SiNWs. S. Ben Dkhil et al [34] concluded that thermal annealing gave rise to a reduction in the charge separation efficiency and thus in their transfer at the interface between the substrate and silicon nanowires.…”

Section: Discussionmentioning

confidence: 99%

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

Wang

Zhang

2023

Coatings

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We demonstrate two distinct experimental processes involving the large-area growth of ordered and disordered silicon nanowire arrays (SiNWs) on a p-type silicon substrate using the metal-assisted chemical etching method. The two processes are based on the etching of monocrystalline silicon wafers by randomly distributed Ag films and ultra-thin Au films with ordered nano-mesh arrays, respectively, wherein the growth of SiNWs is implemented using a specific proportion of a HF-containing solution at room temperature. In this study, the microstructural change mechanisms for the two morphologically different arrays before and after annealing were investigated using Raman spectra. The effects of various mechanisms on the observed Raman scattering peak’s deviation from symmetry, redshift and broadening were analyzed. The evolution of the unstable amorphous structures of nanoscale materials during the high-temperature annealing process was observed via high-resolution scanning electron microscope (SEM) observations. The scattering peak parameters determined from the Raman spectra led to conclusions concerning the various mechanisms by which high-temperature annealing influences the microstructures of the two morphologically different SiNWs fabricated on the p-type silicon substrate. Therefore, the deviation of SiNWs from the monocrystalline silicon scattering peak at 520.05 cm−1 when changing the diameter of the nanowire columns was calculated to further analyze the effect of thermal annealing on Raman characteristics.

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Section: Discussionmentioning

confidence: 99%

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

Wang

Zhang

2023

Coatings

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“…Anodizing can produce a self-organizing and homogeneous morphology of porous anodic aluminum oxide (AAO) with peculiar characteristics, such as a large surface to volume ratio, a dielectric constant, good adhesion, mechanical strength, thermal stability, and corrosion resistance (Kao & Chang, 2014;Lee et al, 2013;Keshavarz et al, 2013). Porous AAO has been applied as nano-templates and resistance films for magnetic and photonic devices (Nguyen et al, 2017;Chung et al, 2017) , biosensors (Wu et al, 2015), biotechnology (Kang et al, 2007;Ingham et al, 2012), or surface-enhanced Raman scattering (Hao et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

An Analysis of the Electrolyte Resistivity Effect on the Pore Diameter and Pore Density of Anodic Aluminium Oxide (AAO) Films Produced by Single-Step Anodization

Rizkia

Soedarsono²,

Munir³

et al. 2017

IJTech

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Nanoporous anodic aluminum oxide (AAO) layers were successfully fabricated on aluminum foil through an anodizing process in oxalic acid and mixed electrolytes of sulfuric and oxalic acid. The effect of electrolyte resistivity on the morphology of nanoporous AAO, such as pore diameter and pore density, was investigated. The nanoporous AAO layers"bmorphology was examined using field emission scanning electron microscopy (FE-SEM) and analyzed using image analysis software. The results showed that anodizing in mixed electrolytes (sulfuric and oxalic acid) produced a much smaller pore diameter and a much higher pore density at lower voltage compared to anodizing in a single oxalic acid. For the anodizing process in oxalic acid, the pore diameters ranged from 14 to 52 nm, and the pore density ranged from 34106 pores in 500×500 nm 2. The anodizing process in the mixed electrolytes resulted in pore diameters within the range of 714 nm, and the pore densities were within the range of 211779 pores in 500×500 nm 2. Overall, increasing the electrolyte resistivity within the same solution leads to decreased pore diameter.

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Anion exchange membrane with well-ordered arrays of ionic channels based on a porous anodic aluminium oxide template

Chen

Wang

et al. 2018

J Appl Electrochem

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Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

Cited by 3 publications

References 18 publications

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

An Analysis of the Electrolyte Resistivity Effect on the Pore Diameter and Pore Density of Anodic Aluminium Oxide (AAO) Films Produced by Single-Step Anodization

Anion exchange membrane with well-ordered arrays of ionic channels based on a porous anodic aluminium oxide template

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