Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors

Montañez, L; Strauß, Ina; Caro, Jürgen; Osten, H. J.

doi:10.1016/j.micromeso.2018.10.029

Cited by 3 publications

(3 citation statements)

References 46 publications

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“…Figure shows the benchmarking of threshold voltage versus dielectric constant of Al/Cu‐MOCs/Si MIS structures as related with previously reported MOFs, inorganic, and organic dielectrics based p‐MIS structures [ 43,55,72,77,80,81 ] . The fabricated Al/Cu‐MOCs/Si MIS structures reported a dielectric constant of (κ ≈ 5.49), and threshold voltage of (≈0.17 V), respectively as shown in Figure 8.…”

Section: Resultsmentioning

confidence: 80%

“…Cu‐MOCs dielectric based Al/Cu‐MOCs/Si MIS structures, exhibit positive threshold voltage as compared to mainstream, especially inorganic dielectric based MIS structures [ 55,77,81 ] . Also, Cu‐MOCs show high dielectric constant in comparison with state‐of‐art MOFs based dielectrics [ 43,80 ] . Hence, Al/Cu‐MOCs/Si MIS structures stand tall with high performance operations, and being highly desirable for futuristic CMOS transistor applications.…”

Section: Resultsmentioning

confidence: 99%

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Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Gupta

Kumar

Sharma

2021

Adv Elect Materials

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The suitability of metal‐organic frameworks (MOFs) as functional materials for future electronic logic devices with desirable dielectric constant, bandgap, high‐quality interface, low leakage current, and better compatibility is still an open challenge. Owing to the synergistic complementary properties of MOFs systems, a low‐cost copper‐metal‐organic nanoclusters (Cu‐MOCs) has been synthesized comprising inorganic copper metal unit allied organic m‐toluic acid ligand by facile sol–gel strategy. It offers large‐area thin‐films uniformity, high dielectric constant (κ ≈ 5.49), improved interfacial properties, dynamic switching behavior with the stimuli field, and extends the realization of metal‐organic‐framework dielectric for scalable complementary‐metal‐oxide‐semiconductor (CMOS) logic applications over customary hybrid counterparts. Various techniques such as single crystal X‐ray diffraction, X‐ray photoelectron spectroscopy, thermogravimetric analysis, and energy dispersive X‐ray spectroscopy have been used to validate the Cu‐MOCs formulation. In particular, the fabricated Cu‐MOCs, metal–insulator–semiconductor structures exhibit promising dynamic switching behavior responsive to the applied field, hysteresis‐free capacitance–voltage characteristics, low interfacial trap density (≈1.4 × 1011 eV−1 cm−2), low effective oxide charges (≈1.1 × 1011 cm−2), and noteworthy small leakage current density (≈1.29 nA cm−2 @ 1 V) ever since in electrical analysis. Cost‐effective novel Cu‐MOCs successfully demonstrate high‐performance, reliable gate dielectrics for next‐generation CMOS logic devices.

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Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Gupta

Kumar

Sharma

2021

Adv Elect Materials

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“…The HKUST-1 MOF-films were prepared layer-by-layer from benzene-1,3,5-tricarboxylic acid and Cu(II) acetate precursor on FTO glass substrate by a spraying technology, , resulting in SURMOFs of optical quality. For AB guest loading, the samples were immersed in an ethanolic solution of AB for 72 h at 60 °C.…”

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confidence: 99%

Reversible Photoalignment of Azobenzene in the SURMOF HKUST-1

Koehler

Strauß

Mundstock

et al. 2021

J. Phys. Chem. Lett.

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Azobenzene guest molecules in the metal–organic framework structure HKUST-1 show reversible photochemical switching and, in addition, alignment phenomena. Since the host system is isotropic, the orientation of the guest molecules is induced via photo processes by polarized light. The optical properties of the thin films, analyzed by interferometry and UV/vis spectroscopy, reveal the potential of this alignment phenomenon for stable information storage.

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Design strategies for dielectric metal–organic frameworks and their applications in microelectronic devices

Inamdar,

Kamal,

Usman

et al. 2024

Coordination Chemistry Reviews

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Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors

Cited by 3 publications

References 46 publications

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Reversible Photoalignment of Azobenzene in the SURMOF HKUST-1

Design strategies for dielectric metal–organic frameworks and their applications in microelectronic devices

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