Impact of Cd2+-treatment on the band alignment at the ILGAR-ZnO/CuIn(S,Se)2 heterojunction

Weinhardt, L.; Bär, Marcus; Muffler, H.-J.; Fischer, Ch.‐H.; Lux‐Steiner, Martha Ch.; Niesen, T. P.; Karg, F.; Gleim, Th.; Heske, C.; Umbach, E.

doi:10.1016/s0040-6090(03)00270-0

Cited by 31 publications

(17 citation statements)

References 20 publications

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“…The sequence of O1s emission signals in Fig. 15(left) reveals an increasing Zn oxide signal at about 530.5 eV (attribution according to [82]) with increasing energy input, at the same time the hydroxide peak at about 533.0 eV decreases. Fig.…”

Section: Dynamic Measurements For the Investigation Of Reactions Indumentioning

confidence: 92%

“…Thus, the position of its maximum could be correlated with the Zn(O,OH) composition (not shown here, see [81]). Together with optical and IPES measurements [82] the band alignment as a function of the Zn hydroxide/oxide ratio was possible. As the ILGAR process allows the control of this composition, also the solar cell results with various WEL compositions could be explained.…”

Section: Dynamic Measurements For the Investigation Of Reactions Indumentioning

confidence: 99%

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Synchrotron-based spectroscopy for the characterization of surfaces and interfaces in chalcopyrite thin-film solar cells

Lauermann

Bär

Fischer

2011

Solar Energy Materials and Solar Cells

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Section: Dynamic Measurements For the Investigation Of Reactions Indumentioning

confidence: 92%

Section: Dynamic Measurements For the Investigation Of Reactions Indumentioning

confidence: 99%

Synchrotron-based spectroscopy for the characterization of surfaces and interfaces in chalcopyrite thin-film solar cells

Lauermann

Bär

Fischer

2011

Solar Energy Materials and Solar Cells

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“…However, the earliest work on CuInSe 2 single crystals showed that Cd and Zn are efficient n-type dopants [3]. Recent studies have shown that the conduction band minimum is lowered because of the Cd PE treatment [8]. Based on the above, we suggest that a realistic model for the CdS/CIGS solar cells must include the following factors: changes to the electrical properties of the surface region of the absorber; changes to the chemical composition across the interface; passivation of interface states; and the CdS window layer.…”

Section: Methodsmentioning

confidence: 99%

Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cells

Ramanathan

Pankow

Asher

2004

Physica Status Solidi (b)

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PACS 71.55Gs, 72.40.+w, 73.40.Lq, 84.60.Jt This paper describes the effect of Cd and Zn impurities in the formation of photovoltaic junctions using CuInSe 2 -based alloy thin-film absorbers. We compare the properties of solar cells fabricated by using CdS window layers with those obtained by Cd or Zn treatment from the liquid or vapor-phase environments. Efficient solar cells are obtained for the latter two cases, and their properties are comparable to those with CdS window layers. The results are interpreted in terms of the ability of Cd and Zn to produce n-type doping in the surface region of the absorbers.

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“…This shoulder is tentatively attributed to the presence of Zn(OH) 2 bonds, which has been shown previously to occur at ZnO surfaces and to degrade readily into ZnO and H 2 O with heat and/or photon irradiation. 30,32,33 …”

Section: Experimental Descriptionmentioning

confidence: 99%

Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

Horsley

Beal

Wilks

et al. 2014

Journal of Applied Physics

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To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

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Impact of Cd2+-treatment on the band alignment at the ILGAR-ZnO/CuIn(S,Se)2 heterojunction

Cited by 31 publications

References 20 publications

Synchrotron-based spectroscopy for the characterization of surfaces and interfaces in chalcopyrite thin-film solar cells

Synchrotron-based spectroscopy for the characterization of surfaces and interfaces in chalcopyrite thin-film solar cells

Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cells

Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

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