Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

Abstract

In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for highperformance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted for sp3d5s * tight-binding modeling. The channel thickness, t ch is varied from 1.7 to 4.7 nm to evaluate the device figure of merits (FOMs). The thinner channel's device shows a lower OFF-state current, while the ticker channel device allows a higher ON-state current. The threshold voltage is approximately 0.4 V for GaAs DG-JLMOSFETs with t ch = 1.7 nm, whereas it reduces to ∼0.05 V for that of t ch = 4.7 nm. Similar characteristics have been shown in GaSb devices. Besides, a significant impact of t ch on the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) is found in GaSb DG-JLMOSFETs compared with those of GaAs devices. The devices show a higher leakage-power dissipation in both channel materials and low-intrinsic delay for thicker t ch due to a substantial amount of energy drop. The above results indicate that III-V-based DG-JLMOSFETs are very promising for next-generation high-performance switching technology.INDEX TERMS GaAs, GaSb, double gate, junctionless MOSFETs, nano-scaled device, short-channel effects (SCEs), high-performance switching.

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Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

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Band-structure based electrostatics model for ultra-thin-body double-gate silicon-on-insulator MOS devices

“…Having mentioned the challenges associated with the existing models, the sp 3 d 5 s * tight-binding (TB) Method [31][32][33][34][35], while being computationally inefficient [36,37] compared to effective mass approximation (EMA) based approaches [38][39][40][41][42], is found to be more accurate in terms of considering effect of confinement [43] and hence the electrostatics parameters such as potential and electron carrier concentration obtained from utilizing the band-structure calculated from TB method (TBM) are more accurate than the parameters obtained from EMA based approaches. Furthermore, with a view to maintaining the accuracy as well as reducing the computational cost of calculating the band-structure of ultra-thin-body (UTB) devices from TBM, a significant k-point based approach is recently reported by Solanki et al [44], where identification of significant k-points around the band-minima, enables accurate determination of the electrostatics for DG-SOI MOS devices.…”