Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs

Kerber, A.; Vayshenker, A.; Lipp, D.; Nigam, T.; Cartier, E.

doi:10.1109/irps.2010.5488803

Cited by 25 publications

(9 citation statements)

References 10 publications

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“…On the other hand, trapping effect on TDDB may also be analyzed [1][2][3][4]. In this respect, Fast PBTI measurements are performed under similar conditions as TDDB ( Figure 10).…”

Section: B Ac/dc Tddb Results and Discussionmentioning

confidence: 99%

“…In this respect, the recent investigations on TDDB AC/DC effect are performed under CVS with interruption for parameters measurement [1][2][3][4]. Nevertheless, while comparing CVS with and without interruption, a clear effect of stress interruption is evidenced on TBD ( Figure 1).…”

Section: A Otf Monitoring Methodologymentioning

confidence: 99%

“…Nowadays, the AC/DC effect study on Time Dependent Dielectric Breakdown (TDDB) in high-k/Metal gate based technology is performed under interrupted stress [1][2][3][4]. However, TDDB distribution and voltage acceleration are found to strongly depend on stress waveforms and stress interruption, which may induce assessment errors [5].…”

Section: Introductionmentioning

confidence: 99%

“…In this work, AC TDDB dependences on frequency are presented using the new methodology. Moreover, since many studies were only performed using a 50% duty cycle [1][2][3][4], we also investigate the effect of AC stress with different duty cycles on TDDB. Finally, the origin of the AC/DC effect on TDDB is discussed using current vs time traces analysis, and performing an extensive PBTI study using fast measurements [7].…”

Section: Introductionmentioning

confidence: 99%

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Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

Bezza

Rafik

Roy

et al. 2014

2014 IEEE International Reliability Physics Symposium

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This paper deals with AC/DC effect on nMOS TDDB (Time Dependent Dielectric Breakdown) and PBTI (Positive Bias Temperature Instability) using suitable OTF (on the Fly) monitoring methodologies. First, an adapted unipolar AC stress without stress interruption is used to study TDDB dependences on frequency and duty cycle. For frequencies above 100Hz, Time to Breakdown is shown to depend significantly on these two parameters. On the other hand, in order to evidence a possible effect of trapping on TDDB, PBTI dependences on frequency and duty cycle are also studied using fast BTI measurement. Finally, trapping/detrapping mechanisms fail to explain TDDB observations.

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“…On the other hand, trapping effect on TDDB may also be analyzed [1][2][3][4]. In this respect, Fast PBTI measurements are performed under similar conditions as TDDB ( Figure 10).…”

Section: B Ac/dc Tddb Results and Discussionmentioning

confidence: 99%

Section: A Otf Monitoring Methodologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

Bezza

Rafik

Roy

et al. 2014

2014 IEEE International Reliability Physics Symposium

View full text Add to dashboard Cite

show abstract

“…Even much research has addressed the reliability of specific material systems or devices using high-k dielectrics, the study of the intrinsic reliability characteristics of high-k dielectrics has been limited because their material composition and integration processes are so diverse, depending on specific applications. Compared with the decades-long debates on the intrinsic reliability mechanisms of SiO 2 -based gate dielectric, it is evident that the intrinsic reliability characteristics of high-k dielectric have not been sufficiently explored [6]- [9].…”

Section: Introductionmentioning

confidence: 99%

Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys

Kim

Jung

et al. 2013

IEEE Trans. Electron Devices

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A thermochemical model describing the relationship between the dielectric breakdown field (E BD ) and dielectric constant(k) of high-k dielectric has been calibrated for Hf x Al 1−x O y alloys with k values from 7 to 24. Metal-insulatormetal (MIM) capacitors with Hf x Al 1−x O y high-k dielectric films were used to extract the intrinsic time zero dielectric breakdown characteristics. Breakdown field values of these Hf x Al 1−x O y alloys were found to decrease as a function of k −0.77 while the electric field acceleration parameter, γ , increases as a function of k 1.37 . Using the thermochemical model calibrated with the experimental data, a Hf x Al 1−x O y 10-year lifetime was extrapolated as a function of the dielectric constant to provide insight for future dielectric development. IndexTerms-Al 2 O 3 , breakdown field, dielectric constant, HfO 2 , lifetime, MIM capacitor, thermochemical model, time-dependent dielectric breakdown (TDDB).

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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Izumi

Nakasaki

Fukatsu

et al. 2013

Microelectronics Reliability

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This paper discusses time-dependent dielectric breakdown (TDDB) in n-FETs with HfSiON gate stacks under various stress conditions. It was found that the slope of Weibull distribution of T bd , Weibull β, changes with stress conditions, namely, DC stress, unipolar AC stress and bipolar AC stresses. On the other hand, the time evolution component of stress-induced leakage current (SILC) was not changed by these stresses. These experimental results indicate that the modulation of electron trapping/de-trapping and hole trapping/de-trapping by stress condition changes the defect size in high-k gate dielectrics. Therefore, the control of injected carrier and the characteristics of trapping can provide the steep Weibull distribution of T bd , leading to long-term reliability in scaled CMOS devices with high-k gate stacks.

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Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs

Cited by 25 publications

References 10 publications

Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

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Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs

Cited by 25 publications

References 10 publications

Frequency dependence of TDDB &amp; PBTI with OTF monitoring methodology in high-k/metal gate stacks

Frequency dependence of TDDB &amp; PBTI with OTF monitoring methodology in high-k/metal gate stacks

Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

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Product

Resources

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Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks