2020
DOI: 10.1016/j.apsusc.2020.147465
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Impact of chloride surface treatment on nano-porous GaN structure for enhanced water-splitting efficiency

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Cited by 31 publications
(13 citation statements)
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“…Note that defect-assisted recombination would significantly reduce the photocarrier lifetime, and thus lower the water-splitting efficiency. [35] As residual stress is associated with defects in single crystals, Figure 3a Figure 3b are consistent, both of which confirmed that PEC etching will remove defects from GaN and benefit the water-splitting efficiency.…”
Section: Optical Characterizationsupporting
confidence: 65%
“…Note that defect-assisted recombination would significantly reduce the photocarrier lifetime, and thus lower the water-splitting efficiency. [35] As residual stress is associated with defects in single crystals, Figure 3a Figure 3b are consistent, both of which confirmed that PEC etching will remove defects from GaN and benefit the water-splitting efficiency.…”
Section: Optical Characterizationsupporting
confidence: 65%
“…The development of stable and efficient materials for photoelectrochemical (PEC) water splitting to produce hydrogen is one of the challenges in recent years that has arisen from the depleting fossil fuel reserves and rising environmental pollution. Among others, Group III nitride semiconductors are considered to be promising materials toward water splitting due to their attractive physical properties, appropriate band-gap and band-edge potentials, and stability against corrosion. The PEC water-splitting studies performed on GaN and its alloy heterostructures have shown active photocatalytic behavior in aqueous solutions under light illumination. However, the efficiency of GaN and InGaN is reported to be lower due to the high recombination rate of photogenerated charge carriers as well as losses of incident light reflection. , Various approaches such as surface modification or the development of low-dimensional nanostructures, passivation with a cocatalyst, the use of 2D materials, etc., are being adopted for improving the performance of a photocatalyst. ,, Kim et al showed that GaN film surface nanostructuring, i.e., truncated cone structures, has improved water-splitting efficiency compared to a planar GaN film due to enhanced light trapping and reduced light losses, resulting in enhanced photocatalytic activity . Also, the high surface-area-to-volume ratio provides more active sites for water redox reactions.…”
Section: Introductionmentioning
confidence: 99%
“…The GaN nanostructures fabricated through the PEC etching method have shown significant improvement in energy conversion efficiency, and the photocurrent density increased by 390% compared to that of a planar GaN photoelectrode . Son et al reported that the presurface treatment of a nanoporous GaN photoelectrode with halogen atoms has shown better photocatalytic characteristics compared to an untreated nanoporous GaN. , Varadhan et al reported that molecular beam epitaxy (MBE)-grown GaN nanowires on a silicon (Si) substrate treated with an organic thiol (1,2-ethanedithiol) have improved the photocatalyst efficiency with longer operational stability compared to bare GaN nanowires . The GaN nanowires coated with 2D W x S 1– x and MoS 2 /GaN hybrid structures are also promising photoanode materials with better efficiency for PEC applications. , Bae et al reported a hybrid structure of graphene and MBE-grown GaN nanowires on a Si substrate for the application of water splitting and found a 2-fold increase in the photocurrent density in comparison to pristine GaN nanowires .…”
Section: Introductionmentioning
confidence: 99%
“…In particular, most semiconductor photoanodes operate at high oxidation potentials that are suitable for PEC water splitting . Recently, metal nitrides have emerged as a new family of oxide-free photoelectrodes and are attracting the attention of researchers because of their unique intrinsic and extrinsic properties. , In particular, metal nitrides have promising applications in photo­(electro)­chemical reactions, because of their excellent electronic structure and moderate corrosion resistance. …”
Section: Introductionmentioning
confidence: 99%