Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors

Аlmaev, А. V.; Chernikov, Е. V.; Novikov, V. V.; Kushnarev, Bogdan O.; Yakovlev, Nikita; Chuprakova, Ekaterina V.; Oleinik, V. L.; Lozinskaya, A.; Gogova, D.

doi:10.1116/6.0000723

Cited by 24 publications

(11 citation statements)

References 54 publications

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“…[50] In addition, the introduced additives of metals can significantly change the microstructure of the surface of the Ga 2 O 3 layers, leading to an increase in the specific surface area and the response to gases, as well as acting as additional adsorption centers with high catalytic activity. [23,51] Additional researches are needed for a more detailed study of the effect of tin additive on the gas-sensitive properties of the ε-Ga 2 O 3 layers. In addition, the high sensitivity to H 2 of the ε-Ga 2 O 3 : Sn layer is probably due to the undoped GaN/Al 2 O 3 templates with nonconductive properties.…”

Section: Gas-sensing Mechanismmentioning

confidence: 99%

Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide

Аlmaev

Николаев

Butenko

et al. 2021

Physica Status Solidi (b)

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Gallium oxide Ga 2 O 3 has at least five known polymorphic forms commonly denoted as α, β, γ, δ, and ε(κ). [1] According to recent findings, ε-Ga 2 O 3 is not a true polymorph of hexagonal P6 3 mc symmetry; rather, it is composed of twinned rotational domains of orthorhombic κ-Ga 2 O 3 of Pna2 1 space group. [2] All Ga 2 O 3 polymorphs are ultrawide-bandgap semiconductors and are promising for applications in power and sensor electronics. There is growing interest in the research of metastable polymorphs, including the pseudohexagonal ε-Ga 2 O 3 form.Pseudohexagonal ε-Ga 2 O 3 is stable up to the temperature of T ¼ 700 C and is epitaxially compatible with other semiconducting materials with a hexagonal or pseudohexagonal structure such as AlN, GaN, 6H-SiC, sapphire, and some other metal oxides. [3,4] The reported bandgap energy of ε-Ga 2 O 3 is close to that of β-Ga 2 O 3 and varies from 4.5 to 5.0 eV. [5][6][7][8][9] The ε-Ga 2 O 3 phase exhibits ferroelectric properties, [3,6,10,11] enabling the development of high-electron-mobility transistors (HEMTs) based on this material. [12] Solar-blind UV detectors based on ε-Ga 2 O 3 demonstrate record characteristics [5,[13][14][15][16] due to the high symmetry of this polymorph.Previously, we studied the effect of H 2 on the electrical conductivity and gas-sensing properties of the Pt-contacted doublephase ε-Ga 2 O 3 /α-Ga 2 O 3 :Sn structures grown by halide vaporphase epitaxy (HVPE) on patterned sapphire substrates (PSS). [17] These structures showed response to H 2 starting from room temperature (RT). The minimum detectable H 2 concentration was 54 ppm at T ¼ 125 C. At low applied voltages U < 7.5 V, the double-phase structures showed no response to CH 4 , O 2 , CO, and NH 3 . At U ¼ 7.5-150 V, these structures showed a significant response to O 2 and NH 3 . The authors concluded that the H 2 sensitivity of Pt-contacted double-phase α-Ga 2 O 3 /ε-Ga 2 O 3 structures was caused by the change of the energy barrier height at the interface between the catalytically active Pt contact and ε-Ga 2 O 3 . The reduction of Sn impurity concentration in ε-Ga 2 O 3 / α-Ga 2 O 3 from %4 Â 10 18 to %1.5 Â 10 17 cm À3 led to increase in sensitivity to O 2 at T ¼ 180-220 C and U ≤ 7.5 V. [18] The exposure to oxygen caused a reversible decrease in the current I through the structure. The gas-sensing effect was manifested in modulation of I due to the chemisorption of O 2 on the

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Section: Gas-sensing Mechanismmentioning

confidence: 99%

Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide

Аlmaev

Николаев

Butenko

et al. 2021

Physica Status Solidi (b)

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“…These SEM images were taken for the material of the pH 4 (acidic condition) in which adsorption was more. The adsorbent (ZrO 2 /MWCNT) morphologies (Almaev et al 2021).…”

Section: Scanning Electron Microscope (Sem)mentioning

confidence: 99%

Photo-catalytic dye degradation of methylene blue by using ZrO2/MWCNT nanocomposites

Gangadhar

Ramesh

Jagadish

et al. 2021

Water Practice and Technology

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Photocatalytic degradation of the dyes was deliberated by altering the catalyst and dye concentrations. The Zirconium oxide/Multiwall carbon nanotube (ZrO2/MWCNT) catalyst was facilely synthesized by a hydrothermal synthesis method. The nanocomposite ZrO2/MWCNT was formed in hydrothermal condition 95 °C of low growth temperature. The physico-chemical properties were successfully characterized using X-ray diffraction, (XRD) Scanning Electron Microscope (SEM), Energy dispersive Spectroscopy (EDS), Dynamic light scattering (DLS) analysis, X-ray photoelectron spectroscopy (XPS). The presence of Orbicular shaped ZrO2 nanocrystallines and Multiwall carbon nanotube was characterized by XRD pattern shows the presence of ZrO2 and MWCNT with the 2θ peaks at 19.62, 22.5 & 30.2. The thermal behavior of the ZrO2/MWCNT partials was also investigated by differential thermal analysis, and their vibrational bands were identified by infrared spectroscopy. The photo catalytic degradation of methylene blue in industrial wastewater was observed under UV light irradiation using the synthesized ZrO2/MWCNT as catalyst. The results revealed that the ZrO2/MWCNT nanoparticles exhibited high degeneration with COD and TOC reducing from 241 mg/L and 148.00 mg/L to 2.34 mg/L and 1.26 mg/L respectively with the efficiency of 90–94% over 25–60 min duration of UV irradiation time. In comparison with the pristine Zirconium Oxide and MWCNT, the composite ZrO2/MWCNT nanoparticles exhibited more efficient, the durable and stable photo-catalytic activity during experiments.

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“…The literature reports on chemiresistive oxygen concentration sensors based on undoped β-Ga 2 O 3 thin films operating at high temperature (1000 • C) [18,19] and, more recently, on β-Ga 2 O 3 thin films doped with Si, and Cr 2 O 3 operating at a medium temperature (400 • C) [20,21]. The conductivity of thin and thick films of gallium oxide increases in the presence of ethanol, methanol, carbon monoxide, acetone, hydrogen, hydrogen sulfide, and ammonia in the ambient atmosphere [22][23][24].…”

Section: Introductionmentioning

confidence: 99%

P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles

Krawczyk

Korbutowicz

Szukiewicz

et al. 2022

Sensors

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The electric properties and chemical and thermal stability of gallium oxide β-Ga2O3 make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga2O3 still remains a challenge. A β-Ga2O3 epitaxial layer with a highly developed surface was synthesized on gold electrodes on a Al2O3 substrate via a Halide Vapor Phase Epitaxy (HVPE) method. The epitaxial layer was impregnated with an aqueous colloidal solution of gold nanoparticles with an average diameter of Au nanoparticle less than 5 nm. Electrical impedance of the layer was measured before and after modification with the Au nanoparticles in an ambient atmosphere, in dry nitrogen, and in air containing dimethyl sulfide C2H6S (DMS). After the impregnation of the β-Ga2O3 epitaxial layer with Au nanoparticles, its conductance increased, and its electric response to air containing DMS had been inversed. The introduction of Au nanoparticles at the surface of the metal oxide was responsible for the formation of an internal depleted region and p-type conductivity at the surface.

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Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors

Cited by 24 publications

References 54 publications

Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide

Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide

Photo-catalytic dye degradation of methylene blue by using ZrO2/MWCNT nanocomposites

P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles

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