Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices

Kodolitsch, Elisabeth; Sodan, V.; Krieger, Michael; Weber, Heiko B.; Tsavdaris, Nikolaos

doi:10.1088/2053-1591/acaa1f

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…In terms of silicon carbide crystalline materials, 3C-SiC materials are mainly used in photovoltaic applications, such as solar cells [ 1 , 2 ]. Indeed, 4H-SiC and 6H-SiC are most widely used in the semiconductor field, where 4H-SiC is mainly used for the preparation of high-frequency, high-temperature, and high-power devices [ 3 , 4 , 5 ]. In contrast, 6H-SiC materials are mainly used for the production of power devices in the field of optoelectronics, such as photoconductive detectors or substrate materials for LED devices [ 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

et al. 2023

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When semiconductor materials are exposed to radiation fields, cascade collision effects may form between the radiation particles in the radiation field and the lattice atoms in the target material, creating irradiation defects that can lead to degradation or failure of the performance of the device. In fact, 6H-SiC is one of the typical materials for third-generation broadband semiconductors and has been widely used in many areas of intense radiation, such as deep space exploration. In this paper, the irradiation cascade effect between irradiated particles of different energies in the radiation and lattice atoms in 6H-SiC target materials is simulated based on the molecular dynamics analysis method, and images of the microscopic trajectory evolution of PKA and SKA are obtained. The recombination rates of the Frenkel pairs were calculated at PKA energies of 1 keV, 2 keV, 5 keV, and 10 keV. The relationship between the number of defects, the spatial distribution pattern of defects, and the clustering of defects in the irradiation cascade effect of 6H-SiC materials with time and the energy of PKA are investigated. The results show that the clusters are dominated by vacant clusters and are mainly distributed near the trajectories of the SKA. The number and size of vacant clusters, the number of Frenkel pairs, and the intensity of cascade collisions of SKAs are positively correlated with the magnitude of the energy of the PKA. The recombination rate of Frenkel pairs is negatively correlated with the magnitude of the energy of PKA.

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Section: Introductionmentioning

confidence: 99%

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

et al. 2023

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“…Silicon carbide (SiC) possesses excellent electrical properties and corrosion resistance, thereby holding significant industrial value. SiC is often employed as a cladding material in nuclear reactors [ 1 , 2 , 3 , 4 ] and widely used in the semiconductor field [ 5 , 6 , 7 ]. In nature, SiC exists in various crystal structures, including cubic zinc blende (3C) and hexagonal wurtzite (2H, 4H, and 6H).…”

Section: Introductionmentioning

confidence: 99%

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

Yu,

Dai,

et al. 2023

Materials

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Interatomic potentials play a crucial role in the molecular dynamics (MD) simulation of silicon carbide (SiC). However, the ability of interatomic potentials to accurately describe certain physical properties of SiC has yet to be confirmed, particularly for hexagonal SiC. In this study, the mechanical, thermal, and defect properties of four SiC structures (3C-, 2H-, 4H-, and 6H-SiC) have been calculated with multiple interatomic potentials using the MD method, and then compared with the results obtained from density functional theory and experiments to assess the descriptive capabilities of these interatomic potentials. The results indicate that the T05 potential is suitable for describing the elastic constant and modulus of SiC. Thermal calculations show that the Vashishta, environment-dependent interatomic potential (EDIP), and modified embedded atom method (MEAM) potentials effectively describe the vibrational properties of SiC, and the T90 potential provides a better description of the thermal conductivity of SiC. The EDIP potential has a significant advantage in describing point defect formation energy in hexagonal SiC, and the GW potential is suitable for describing vacancy migration in hexagonal SiC. Furthermore, the T90 and T94 potentials can effectively predict the surface energies of the three low-index surfaces of 3C-SiC, and the Vashishta potential exhibits excellent capabilities in describing stacking fault properties in SiC. This work will be helpful for selecting a potential for SiC simulations.

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Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Vivona

Fiorenza

Scuderi

et al. 2023

Applied Physics Letters

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The presence of crystallographic defects can induce notable effects on the mechanisms ruling the current transport in metal/semiconductor contacts. In this context, in this Letter, the impact of stacking faults (SFs) on the characteristics of 4H-SiC Schottky diodes was investigated under both forward and reverse bias. In particular, in the presence of SFs under the contact, while no significant effect on the ideality factor and barrier height was observed under forward bias, an anomalous increase in the leakage current occurred under reverse bias. The observed behavior of the leakage current could be explained by a space-charge limited current model, consistent with the presence of a distribution of trapping states in the gap of 4H-SiC. An increase in the reverse bias above 30 V leads to a complete trap filling. The weak temperature-dependence of the leakage current observed in this regime suggests the coexistence with a tunneling of the carriers through the barrier. The results can be useful to understand unexpected failures in 4H-SiC Schottky diodes.

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Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices

Cited by 3 publications

References 27 publications

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

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