methods or vapor-phase method of chemical vapor deposition (CVD) in the literatures. [9][10][11][12] Among them, with the uniform quality in large-scale, perovskites films are widely used in the photoelectronic devices of photodetectors, solar cells, light emitting diodes, and so on. [13][14][15][16][17][18] However, the defects exist at the grain boundaries (GBs) and surfaces, which always bring up carrier transport barriers and nonradiative centers, seriously limiting the photoelectronic performance of perovskites films. [19] To improve the photoelectronic performance, it is highly desired to suppress defects by controlling GBs and surfaces of perovskites films. Nowadays, surfaces/ GBs passivation is the popular defect-suppressed approach. [20][21][22] For example, Li et al. adopted the reducing agent ascorbic acid to passivate the surfaces/GBs defects of solution-prepared CsSnI 3 films successfully, resulting in the high-performance photodetector with high responsivity of 257 mA W −1 , fast response speed of 0.35/1.6 ms, and excellent stability. [21] Furthermore, Wang et al. pointed out that large crystal size of perovskite film prepared by pressure-assisted solvent-engineering method could efficiently improve the photoelectronic performances due to the less GBs defects. [22] In the literatures, beyond the solution-phase growth methods, vapor-phase growth method of CVD has also been proved to be useful for the controllable growth of channel semiconductors of photoelectronic devices with controlled surfaces/ GBs, size, morphology, and crystallization. [11,[23][24][25][26][27][28] Therefore, it is now one of prospective area in growing lead-free all-inorganic perovskites films by CVD method.In this work, the typical lead-free all-inorganic perovskite of CsSnBr 3 is selected as an example to demonstrate the control of surfaces/GBs by a simple CVD method. The as-prepared CsSnBr 3 films are smooth, pinhole-free, and compress with uniform thickness. More importantly, the grain size of asprepared CsSnBr 3 films can be easily controlled by tuning the growth temperature. With the growth temperature increases from 590 to 630 °C, the average grain size of CsSnBr 3 films increases from 4.9 ± 1.5 to 36.7 ± 3.5 µm, indicating the success in GBs reduction. At the same time, the lifetime of photogenerated carrier also increases with the increase of grain size. Owing to the decreased GBs, the as-fabricated CsSnBr 3 film photodetector shows excellent performance with photocurrent up to 760 nA, responsivity up to 9200 mA W −1 and fast