2019
DOI: 10.1016/j.matlet.2019.07.088
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Impact of deposition temperature on the structural properties of CdS/Si nanoparticles for nanoelectronics

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Cited by 12 publications
(10 citation statements)
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“…This is because the quantum confinement effect present in the nano-sized semiconductor shows unique physical and chemical properties, such as size-dependent bandgap shifts Dris et al 2012;Sheng et al 2017). CdS have become one of the magnetic materials among the II-IV group semiconductor compounds due to its direct wider optical bandwidth of 2.42 eV at room temperature and the existing nonlinear optical properties (Abdel-Galil et al 2017;Ayodhya et al 2015;Hussein et al 2019;Landeros et al 2019;Martínez-Landeros et al 2019;Shkir et al 2020;Saxenaa et al 2018;Yang et al 2019). CdS nano-sized semiconductors have already been widely used as optical sensors, transistors, solar batteries, photo-electrocatalysis, as well as luminescence devices, laser, light-emitting diodes, detectors, and also in antibacterial activity (Göde, 2019;Hussein et al 2019;Ji et al, 2019;Martínez-Landeros et al 2019;Priya et al 2018;Saxenaa et al 2018;Sonker et al 2020;Yang et al 2019).…”
Section: Introductionmentioning
confidence: 99%
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“…This is because the quantum confinement effect present in the nano-sized semiconductor shows unique physical and chemical properties, such as size-dependent bandgap shifts Dris et al 2012;Sheng et al 2017). CdS have become one of the magnetic materials among the II-IV group semiconductor compounds due to its direct wider optical bandwidth of 2.42 eV at room temperature and the existing nonlinear optical properties (Abdel-Galil et al 2017;Ayodhya et al 2015;Hussein et al 2019;Landeros et al 2019;Martínez-Landeros et al 2019;Shkir et al 2020;Saxenaa et al 2018;Yang et al 2019). CdS nano-sized semiconductors have already been widely used as optical sensors, transistors, solar batteries, photo-electrocatalysis, as well as luminescence devices, laser, light-emitting diodes, detectors, and also in antibacterial activity (Göde, 2019;Hussein et al 2019;Ji et al, 2019;Martínez-Landeros et al 2019;Priya et al 2018;Saxenaa et al 2018;Sonker et al 2020;Yang et al 2019).…”
Section: Introductionmentioning
confidence: 99%
“…CdS have become one of the magnetic materials among the II-IV group semiconductor compounds due to its direct wider optical bandwidth of 2.42 eV at room temperature and the existing nonlinear optical properties (Abdel-Galil et al 2017;Ayodhya et al 2015;Hussein et al 2019;Landeros et al 2019;Martínez-Landeros et al 2019;Shkir et al 2020;Saxenaa et al 2018;Yang et al 2019). CdS nano-sized semiconductors have already been widely used as optical sensors, transistors, solar batteries, photo-electrocatalysis, as well as luminescence devices, laser, light-emitting diodes, detectors, and also in antibacterial activity (Göde, 2019;Hussein et al 2019;Ji et al, 2019;Martínez-Landeros et al 2019;Priya et al 2018;Saxenaa et al 2018;Sonker et al 2020;Yang et al 2019). CdS is also an n-type semiconducting material and acts as a window layer for solar cell fabrication due to its high value of transmittance and band gap width (Martínez-Landeros et al, 2019;Shkir et al 2020).…”
Section: Introductionmentioning
confidence: 99%
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“…Hayden et al were the first to report the fabrication of heterostructured nanowires with p‐type Si core and n‐type CdS shell using pulsed‐laser deposition (PLD) for the application as nano LEDs in 2005 [8,9] . Subsequently, there has been quite a few reports involving the application of CdS/Si heterojunction as photodetector [10–18] . A recent work by Lin et al reported the synthesis of CdS quantum dot (QD) decorated vertically aligned Si NWs arrays with enhanced activity and recyclable operability for photocatalytic hydrogen evolution [19] .…”
Section: Introductionmentioning
confidence: 99%
“…[8,9] Subsequently, there has been quite a few reports involving the application of CdS/Si heterojunction as photodetector. [10][11][12][13][14][15][16][17][18] A recent work by Lin et al reported the synthesis of CdS quantum dot (QD) decorated vertically aligned Si NWs arrays with enhanced activity and recyclable operability for photocatalytic hydrogen evolution. [19] The formation of p-n heterojunction at the interface of the Si NWs and the CdS QDs results in an internal electric field which facilitate the separation and transport of the photoinduced charge carriers thereby improving both the photoactivity and photostability of the Si NWs/CdS array composite.…”
Section: Introductionmentioning
confidence: 99%