The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

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Pure spherical-like SnO2 and agglomerated spherical SnO2/TiO2 nanostructures (NS) films were effectively synthesized via hydrothermal route and modest combination of pulse laser ablation besides hydrothermal (PLAL-H) methods, respectively. The as-prepared samples were deposited on glass substrates at growth temperature 100 °C and characterized by FESEM, X-ray diffraction, and UV-Vis absorption and Photoluminescence (PL) measurements. Both samples exhibit a pure tetragonal rutile and anatase polycrystalline structure. The PL spectrum of pure SnO2 Ns reveals five emission peaks in UV and visible regions. In contrast, a red shift in UV emission peak was clearly observed in SnO2/TiO2 nanocomposite spectrum and disappeared all visible emission peaks. Moreover, the samples as photocatalysts films were examined under sunlight irradiation driven photodegradation of methylene blue (MB) dye. The findings exposed that the photodegradation efficiency toward MB dye at maximum irradiation time 150 min was mostly similar around 21.5 % of both as-growth films.