“…Silicon carbide (SiC) has been identified as the choice of material to fabricate high temperature, high voltage, high frequency, high power, radiation resistant devices due to its excellent physical and chemical properties [1][2][3]. General epitaxial growth is performed on off-axis 4H-SiC(0001) substrates, which would raise the cost of materials and devices, reduce the performance and reliability of the device because of the basal plane dislocations reproduction [4,5].…”